PTFA180701FV4R0XTMA1

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PTFA180701FV4R0XTMA1 Application Field and Working Principle

PTFA180701FV4R0XTMA1 is an enhancement mode RF power MOSFET transistor suitable for wide range of applications. It is constructed using a N-channel field effect transistor and is made up of a substrate of Silicon with power handling ability. It has excellent performance in terms of transfer characteristics, gate switching times and gate-source capacitance.

Applications

PTFA180701FV4R0XTMA1 is ideal for RF amplification in the VHF, UHF frequency range. It is used in high power applications such as cable TV amplifiers, CATV transport systems and radio broadcast transmitters. It is also used for pre-distortion linearization amplifiers for a wide range of applications.

Features

The features of the PTFA180701FV4R0XTMA1 include high voltage, low ON-resistance, high linear low distortion and a minimum gate switching time. It has a maximum drain-source voltage (VGS) of 12V and a maximum drain current (ID) of 16A. It also features good thermal stability and stability over temperature.

Working Principle

PTFA180701FV4R0XTMA1 is a NO-channel field-effect transistor (FET) which means that it works using an electric current instead of an electron beam. It consists of two major parts: the ga

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