PTFA190451EV4R250XTMA1 Allicdata Electronics
Allicdata Part #:

PTFA190451EV4R250XTMA1TR-ND

Manufacturer Part#:

PTFA190451EV4R250XTMA1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Infineon Technologies
Short Description: IC FET RF LDMOS 45W H-36265-2
More Detail: RF Mosfet LDMOS 28V 450mA 1.96GHz 17.5dB 11W H-362...
DataSheet: PTFA190451EV4R250XTMA1 datasheetPTFA190451EV4R250XTMA1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: LDMOS
Frequency: 1.96GHz
Gain: 17.5dB
Voltage - Test: 28V
Current Rating: 10µA
Noise Figure: --
Current - Test: 450mA
Power - Output: 11W
Voltage - Rated: 65V
Package / Case: H-36265-2
Supplier Device Package: H-36265-2
Base Part Number: PTFA190451
Description

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A PTFA190451EV4R250XTMA1 is a type of field-effect transistor (FET) designed for radio-frequency (RF) applications. FETs are semiconductor devices that can control the flow of electrons or electrical current. As with any type of transistor, FETs are used to amplify, switch, and manipulate signals or power in a variety of circuits. In the case of the PTFA190451EV4R250XTMA1, it is specifically designed to operate effectively at high frequency oscillations on the order of hundreds of megahertz or higher. The device has a low noise figure, good linearity, wide bandwidth, and good thermal stability.

A FET is a type of unipolar transistor that uses an electric field to control current flow. FETs are based on a three-terminal design that consists of a drain, gate and source. Voltage applied to the gate creates a field that can be used to control current flow between the source and drain. In the case of the PTFA190451EV4R250XTMA1, current flows from the source to the drain. When the gate is open, current can flow freely, allowing for signals to be amplified or switched. When the gate is closed, no current can flow, which means signals cannot be amplified or switched.

The PTFA190451EV4R250XTMA1 is a type of enhancement-mode metal-oxide-semiconductor field-effect transistor, or MOSFET. This type of FET is specifically designed to operate at high frequencies and has special features that enable it to function even better at these frequencies. For example, the device has an integrated capacitor that helps reduce noise and increase efficiency by increasing gain. The device also has a low on-resistance, which means it can intensify or switch signals with minimal power consumption.

The PTFA190451EV4R250XTMA1 has a variety of application fields. It can be used in a variety of radio-frequency circuits, such as amplifiers, oscillators, and mixers. It can also be used in high frequency power supplies, and in voltage-controlled oscillators, in which the resistance of the device is used to control the frequency of an oscillator. Additionally, the device can be used for switching applications, such as power converters and power supplies, as well as for low noise amplification.

The PTFA190451EV4R250XTMA1 is a versatile device with a host of application fields. It is designed to operate effectively at high frequencies and can be used in a variety of radio-frequency circuits, power supplies, and low noise amplification. The integrated capacitor helps reduce noise and increase efficiency, while the low on-resistance allows the device to function even better at these frequencies. With its broad range of features and applications, the PTFA190451EV4R250XTMA1 is a versatile device suitable for a wide range of high frequency applications.

The specific data is subject to PDF, and the above content is for reference

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