| Allicdata Part #: | PTFA192001EV4R250XTMA1TR-ND |
| Manufacturer Part#: |
PTFA192001EV4R250XTMA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | FET RF 65V 1.99GHZ H-36260-2 |
| More Detail: | RF Mosfet LDMOS 30V 1.8A 1.99GHz 15.9dB 50W H-3626... |
| DataSheet: | PTFA192001EV4R250XTMA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Transistor Type: | LDMOS |
| Frequency: | 1.99GHz |
| Gain: | 15.9dB |
| Voltage - Test: | 30V |
| Current Rating: | 10µA |
| Noise Figure: | -- |
| Current - Test: | 1.8A |
| Power - Output: | 50W |
| Voltage - Rated: | 65V |
| Package / Case: | 2-Flatpack, Fin Leads |
| Supplier Device Package: | H-36260-2 |
| Base Part Number: | PTFA192001 |
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The PTFA192001EV4R250XTMA1 is a type of RF MOSFET, one of the many kinds of field-effect transistors. A field-effect transistor is a semiconductor device, comprised of source, gate, and drain elements, which works by modulating the electric field between the source and the drain. The PTFA192001EV4R250XTMA1 is specifically designed and developed for use in radio frequency applications.
The MOSFET design of the PTFA192001EV4R250XTMA1 has distinct advantages over other types of transistors when used in RF designs. The device has a lower capacitance, making it much more suitable for high-frequency applications. Additionally, it’s designed with a high on-state resistance and low off-state current, reducing the chances of signal distortion.
The working principle behind the PTFA192001EV4R250XTMA1 is relatively simple. The device is a three-terminal active switching device, capable of operating at high switching frequencies. The gate voltage is used to control the resistance between the source and drain, allowing it to switch from “OFF” to “ON”. In the “OFF” state, the device has a low impedance path, allowing the signal to pass, and in the “ON” state, the device has a high impedance path, blocking the signal.
The high-performance design of the PTFA192001EV4R250XTMA1 makes it suitable for a wide range of RF applications. These include wireless communications, radar transmitters, RF signal amplifiers, and more. The device’s low-capacitive and low-input capacitance make it well-suited for use in high frequency signal amplification and signal switching. Additionally, the device is designed to be extremely reliable, with a high thermal impedance and high stability.
The PTFA192001EV4R250XTMA1 RF MOSFET is a powerful and reliable device, designed specifically for radio frequency applications. It has a low capacitance, making it suitable for high-frequency designs, and a high on-state resistance and low off-state current, enabling reliable signal switching. The device is well-suited for a range of applications, from wireless communications to signal amplification, and with its high thermal impedance and stability, is guaranteed to provide reliable and consistent results.
The specific data is subject to PDF, and the above content is for reference
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PTFA192001EV4R250XTMA1 Datasheet/PDF