PTFA220041M-V4

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PTFA220041M-V4 is one of the devices in the family of transistors and field effect transistors (FETs) utilizing radio frequency (RF). This type is an N-channel depletion-mode enhancement-type insulated-gate field electron transistor (IGFEN) with composite field plates (CFP). In this device, the depletion-type IGFEN is the main driving transistor, while the CFP is the additional transistor using electric field intensity enhancement to raise the breakdown voltage.

The major application of this PTFA220041M-V4 is telecom and IT — RF. It is mainly used in power management circuits of mobile phones, notebook computers and other compact electronic products. Besides, it is also used in communication and high-frequency signal transceiving, such as GSM and CDMA. In addition, this device is also used in the power amplifying parts of other electronic devices, including photoelectronic image capturing devices, high-frequency printer and digital audio products.

The basic principle for PTFA220041M-V4 is the same as other FETs devices. It has three major electrodes— gate, source and drain. To energize the device, a positive voltage is applied to the gate to attract electron from the n-type channel region, and then a current flows along the channel from source to drain. In order to turn off the device, a negative voltage is applied to the gate to repel electron back to the channel.

When using PTFA220041M-V4, the gate-source bias voltage should be between 0 to 5V, and the gate bias voltage should be between 0.5 to 4V. The maximum channel current should be less than 2A. The device provides maximum drain-source breakdown voltage of 200V, while the maximum drain current should not be higher than 31mA.

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