PTFA261301E V1

PTFA261301E V1 is a kind of Radio Frequency (RF) Enhancement Mode Power Field Effect Transistor. It is especially designed for cellular phone applications operating at 3rd Generation (3G) suggested by International Mobile Telecommunications Standard (IMT-2000).

Application Field

Due to its high current rating, low gate charge, and operation at high switching frequencies, PTFA261301E V1 is ideal for a wide range of applications such as:

• Power amplifier linear operations in the transmit chain
• Load switching in the receive chain
• RF switch applications
• Class-D RX, TX switches
• High-speed switching loads
• High side and low side power switches in a power distribution circuit

The device is able to meet the stringent requirements of 3G IMT-2000 thanks to its many small signal parameters. It boasts low RDS(ON) and low thermal resistance.

Working Principle

PTFA261301E V1 provides good current drive capability and matching capability with low gate charge, so it is able to drive higher capacitive loads for for better performance in mobile devices. It supports and is compliant with the QuickPunchTM technology.

The device works in two moce:

• N-Channel Enhancement Mode—This mode operates when the device is connected as a common source amplifier, resulting in a low-impedance output swing.
• P-Channel Enhancement Mode—This mode works when the device is connected as a common drain amplifier, resulting in a high-impedance output swing.

The device also offers good RF linearity performance, making it suitable for switching applications in the transmit chain where low distortion is important. Moreover, it operates at up to 5GHz and withstanding the high temperature environments.

In addition, the low gate charge and the low gate voltage are beneficial to the efficiency of the phone battery. Low side switch and high side switch functions are supported through separate connections. Robust integrated protection ensures the device is safe and reliable under all operating conditions.