R1LV0108ESA-5SI#S0 Allicdata Electronics
Allicdata Part #:

R1LV0108ESA-5SI#S0-ND

Manufacturer Part#:

R1LV0108ESA-5SI#S0

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Renesas Electronics America
Short Description: IC SRAM 1M PARALLEL 32STSOP
More Detail: SRAM Memory IC 1Mb (128K x 8) Parallel 55ns 32-sT...
DataSheet: R1LV0108ESA-5SI#S0 datasheetR1LV0108ESA-5SI#S0 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Supplier Device Package: 32-sTSOP
Base Part Number: R1LV0108E
Description

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R1LV0108ESA-5SI#S0 is a low-voltage CMOS, high-speed static RAM (SRAM) with a 5.5 V supply. It is a very popular memory module for many industrial applications, and its main benefits include low cost and low power consumption. In this article, we will discuss the application field, working principle, and features of this memory module.
  • Application Field:
R1LV0108ESA-5SI#S0 is typically used in industrial and automotive applications, such as in industrial automation, medical device, and vehicle monitoring systems. This memory module is also suitable for applications that require frequent read/write operations, such as in data analysis, signal processing, and machine learning. The low power consumption and low voltage operation of this memory module make it an ideal fit for these types of applications.
  • Working Principle:
The R1LV0108ESA-5SI#S0 memory module utilizes a six-transistor SRAM cell as its basic memory cell. This cell consists of two access transistors, two data retention transistors, and two read/write control transistors. In operation, the two access transistors enable and disable the SRAM cell, while the two data retention transistors are used to store the bit data. The two read/write control transistors are used to control the writing and reading of the bit data into and from the SRAM cell. The operation of the R1LV0108ESA-5SI#S0 memory module is further enhanced by the use of a three-stage data path. The first stage of this data path is used to latch data into the memory cell. The second stage is used to sense the stored data, and the third stage is used to access the stored data. This multi-stage data path is what allows the R1LV0108ESA-5SI#S0 memory module to provide a high-speed, low-power solution for industrial applications.
  • Features:
The R1LV0108ESA-5SI#S0 memory module offers several key features, which make it an ideal choice for many industrial applications. First, it has a low power consumption of only 2.2 mA. This makes it an excellent choice for applications which must operate on a strict power budget. Second, the R1LV0108ESA-5SI#S0 features a high data access speed of up to 116 MHz. This makes it an excellent choice for applications involving real-time data analysis and signal processing. Finally, the memory module is also rated for operation over extended temperatures (-40°C to 100°C). This makes it suitable for applications which involve extreme environmental conditions. In conclusion, the R1LV0108ESA-5SI#S0 is an excellent choice for applications which require high-speed, low-power memory solutions. The memory module is highly suitable for industrial and automotive applications, and its features make it an ideal fit for applications which involve data analysis, signal processing, and machine learning. The low power consumption and extended temperature ratings also make it an ideal fit for applications running on tight power budgets and in extreme conditions.

The specific data is subject to PDF, and the above content is for reference

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