R1LV0808ASB-7SI#B0 Allicdata Electronics
Allicdata Part #:

R1LV0808ASB-7SI#B0-ND

Manufacturer Part#:

R1LV0808ASB-7SI#B0

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Renesas Electronics America
Short Description: IC SRAM 8M PARALLEL 44TSOP II
More Detail: SRAM Memory IC 8Mb (1M x 8) Parallel 70ns 44-TSOP...
DataSheet: R1LV0808ASB-7SI#B0 datasheetR1LV0808ASB-7SI#B0 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 8Mb (1M x 8)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
Base Part Number: R1LV0808A
Description

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The R1LV0808ASB-7SI#B0 is the most advanced product of the Memory series. It is a dynamic random access memory device (DRAM) that is optimized for use in modern state-of-the-art applications. It can store large amounts of data and provide fast read/write access times. The R1LV0808ASB-7SI#B0 is capable of operating at very high clock speeds, making it suitable for a wide range of applications.

The R1LV0808ASB-7SI#B0 is an ideal memory solution in applications such as embedded systems, application servers, desktop computers, and gaming consoles. Its advanced design allows for substantial performance gains due to its faster response time, higher data transfer rate, and increased battery life. This device is also well suited for applications that require the highest level of reliability, such as automotive, aerospace, and military systems.

The working principle of the R1LV0808ASB-7SI#B0 is quite simple. The device is made up of two basic components: DRAM cells and control logic. The DRAM cells provide the storage for the data and the control logic is responsible for communication with the processor and the memory bus. The control logic is composed of an address decoder, column decode logic, row decode logic, and an array of sense amplifiers that are used to read and write data from the DRAM cells.

The address decoder is responsible for translating an address sent from the processor into a particular column and row address, which can then be used by the column and row decode logic to access the desired data in the DRAM. Once the desired location in the memory has been identified, the sense amplifiers are used to read and write the data. After the data has been read or written, the appropriate control signals are generated to indicate the completion of the operation and the memory can then be updated with the output of the operation.

Overall, the R1LV0808ASB-7SI#B0 is an excellent memory device that can be used in a variety of applications and industries. It is fast, reliable, and energy-efficient, making it a suitable choice for a wide range of applications. Due to its wide range of features, it can easily be integrated into various types of systems, making it a flexible and cost-effective solution.

The specific data is subject to PDF, and the above content is for reference

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