R1LV1616RSD-5SI#S0 Allicdata Electronics
Allicdata Part #:

R1LV1616RSD-5SI#S0-ND

Manufacturer Part#:

R1LV1616RSD-5SI#S0

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Renesas Electronics America
Short Description: IC SRAM 16M PARALLEL 52TSOP II
More Detail: SRAM Memory IC 16Mb (2M x 8, 1M x 16) Parallel 55...
DataSheet: R1LV1616RSD-5SI#S0 datasheetR1LV1616RSD-5SI#S0 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 16Mb (2M x 8, 1M x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-TFSOP (0.350", 8.89mm Width)
Supplier Device Package: 52-TSOP II
Base Part Number: R1LV1616R
Description

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The R1LV1616RSD-5SI#S0 memory is an integrated, high-performance memory solution for embedded systems and commercial applications. It provides high-density nonvolatile storage for multiple data types, including audio, video, graphics, and other data types. The integrated single-chip design also supports a wide variety of applications, including digital audio, digital video, graphics processing, image capture, image storage, and other embedded applications.

The R1LV1616RSD-5SI#S0 memory is a fast, reliable, and cost-effective solution for a variety of applications. Its use is highly adaptable, and its built-in features enable it to easily scale up and down as needed. The memory has a 16-bit synchronous random access memory (SRAM) and a 32-bit wide synchronous dynamic random access memory (SDRAM) interface, allowing it to be used in both high-speed and low-speed applications.

The R1LV1616RSD-5SI#S0 memory also includes an on-chip hardware error detection and correction (EDC) module for improved reliability. This module is designed to detect and correct errors in transferred data, preventing data corruption and loss. The memory also supports error code correction (ECC) functionality, which further enhances reliability in high-speed applications.

In terms of performance, the R1LV1616RSD-5SI#S0 memory features an impressive data rate of up to 533MB/s, with a read latency of only 25ns. This makes it ideal for applications that require fast response times and high throughput. It also has a write latency of only 130ns, enabling a quick and smooth writing of data.

The R1LV1616RSD-5SI#S0 memory operates in a single-supply voltage of 2.3V, and is supported on a variety of host processors, including the ARM7TDMI, ARM9, MIPS, PowerPC and x86. The integrated design also helps to reduce board space and component costs, making it an attractive memory solution for cost-sensitive applications.

The R1LV1616RSD-5SI#S0 memory is an ideal solution for a wide variety of embedded and commercial applications, including digital audio and video, graphics processing, image capture, image storage, and other embedded applications. Its high-speed performance, on-chip EDC and ECC, low-voltage operation, and low-cost design make it an attractive choice for cost-sensitive applications.

The specific data is subject to PDF, and the above content is for reference

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