R1LV5256ESA-5SI#S0 Allicdata Electronics
Allicdata Part #:

R1LV5256ESA-5SI#S0-ND

Manufacturer Part#:

R1LV5256ESA-5SI#S0

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Renesas Electronics America
Short Description: IC SRAM 256K PARALLEL 28TSOP
More Detail: SRAM Memory IC 256Kb (32K x 8) Parallel 55ns 28-T...
DataSheet: R1LV5256ESA-5SI#S0 datasheetR1LV5256ESA-5SI#S0 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP
Base Part Number: R1LV5256E
Description

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The R1LV5256ESA-5SI#S0 is a type of Memory component. It has ground-breaking features that make it exceptionally suitable for a wide range of applications, from automotive to consumer electronics. In this article, we\'ll provide an overview of the component\'s application field and the working principle of the R1LV5256ESA-5SI#S0.

Application Field

The R1LV5256ESA-5SI#S0 is an advanced, low-power embedded memory component designed to be used in numerous embedded computing applications which demand high-performance memory. This component is especially suitable for use in various safety-critical systems due to its excellent reliability. It is an ideal component for automotive applications and consumer electronics, as it can be used for storage of code, data, and multimedia data.

The component is capable of storing up to 16 gigabits of data, providing considerable storage capacity for a wide range of applications. The component also features a wide operating temperature range, allowing it to be used in extreme temperature conditions. Additionally, the component has an advanced low-power consumption that makes it suitable for mobile devices.

Working Principle

The R1LV5256ESA-5SI#S0 is designed to be used in a variety of systems and applications. It operates on the principle of storing data on a silicon wafer, or "device," which is used to store information in the form of electrons that can move between the various levels of the device. This principle relies on two essential components: the source and the drain. When a voltage is applied to the source and the drain, the current is able to pass through the device, and as a result, electrons are moved between the source and drain. This movement of electrons is what makes it possible to store data.

In order to access the data stored on the device, the device must be programmed. This is done by using a programming language such as Verilog, which is used to describe the data and the operations that will take place within the device. The programming language is then translated into the circuitry within the device, which allows for the access of the previously stored data. This allows the device to be used in various systems in a wide range of applications.

The R1LV5256ESA-5SI#S0 is an advanced, low-power, embedded memory component designed for use in a variety of embedded computing applications. Its versatile application field and advanced working principle make it an ideal choice for a wide range of applications, from automotive to consumer electronics. It is designed for reliability and excellent performance, making it a great choice for safety-critical systems. With its excellent features and advanced capabilities, the R1LV5256ESA-5SI#S0 is a great addition to any embedded computing system.

The specific data is subject to PDF, and the above content is for reference

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