R1LV0408DSB-5SI#B0

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R1LV0408DSB-5SI#B0 is a semiconductor memory chip designed and manufactured with advanced semiconductor technology. This chip belongs to the memory category and has a wide range of applications in the information field. It is widely used in computers and mobile device for its stable performance and superior scalability.

The R1LV0408DSB-5SI#B0 integrates four biquineal latch units and four precharge output buffers into one low voltage memory cell. It supports a wide range of supply voltage from 1.8V to 3.3V and its clock frequency is up to 533MHz. It has a two-port bus interface and two I/O ports to provide multiple users with simultaneous operation and configuration.

The R1LV0408DSB-5SI#B0 is an advanced low-leakage memory cell that supports low power consumption and high access speed. It uses a three-state toggle method to control data access and read during write operations. It also features a self-timed transceiver for data transfer, a burst mode controller for efficient access to multiple locations, and an auto-precharge operation for power saving.

The R1LV0408DSB-5SI#B0 also features a power-efficient data-incoherent bus interface architecture and can support both 2-way and 4-way interleaved accesses. Its built-in Write Elimination Mechanism technology optimizes data write cycles for maximum system efficiency. The chip also has an on-chip error correction code (ECC) and cyclic redundancy check (CRC) that can detect,correct and easily detect single and double bit errors. The chip also supports auto-refresh circuitry and self-timed I/O logic to ensure high throughput, low power consumption and low latency.

The R1LV0408DSB-5SI#B0 is one of the most advanced and widely used semiconductor memory chip in the field of information technology. Its high performance, scalability and power efficiency makes it ideal for use in mobile devices, computers, automotive and communications applications. Its wide range of features make it suitable for a variety of applications.

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