R1LV0108ESF-5SR#B0

Series:	--
Packaging:	Tray
Part Status:	Discontinued at Digi-Key
Memory Type:	Volatile
Memory Format:	SRAM
Technology:	SRAM
Memory Size:	1Mb (128K x 8)
Write Cycle Time - Word, Page:	55ns
Access Time:	55ns
Memory Interface:	Parallel
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	32-TSOP (8x20)
Base Part Number:	R1LV0108E

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Introduction:

The R1LV0108ESF-5SR#B0 is a type of memory device that is commonly used in computers and other digital equipment. In this article, we will provide a brief overview of the application field and working principle of the R1LV0108ESF-5SR#B0.

Application Field:

The R1LV0108ESF-5SR#B0 is a type of random access memory (RAM) device, designed primarily for use in computers and embedded systems. It is a non-volatile memory chip, meaning that it does not require power to retain the data stored within it. This makes it ideal for applications where data needs to be retained even in the event of a power outage.The R1LV0108ESF-5SR#B0 is also used in embedded systems, in order to help the system store important data, such as configuration settings and parameters. It is also used to improve system performance, as RAM is often much faster than other forms of storage such as hard drives.

Working Principle:

The R1LV0108ESF-5SR#B0 is a type of dynamic random access memory (DRAM) device. It works by storing electrical charge in an array of capacitors, which can be charged and discharged by transistors. The transistors are connected to memory cells, which can store either a 1 or 0.When the transistor is charged, it will cause the capacitor to discharge, which will cause the corresponding memory cell to become a 0. If the transistor is discharged, it will cause the capacitor to charge, which will cause the corresponding memory cell to become a 1. To read the contents of a memory cell, the electrical charge of the capacitor must first be determined. This is done through a process known as “sense amplifying”; electrical charges are detected and compared to reference levels, and the contents of the memory cell can then be determined. To write the contents of a memory cell, the electrical charge of the capacitor must be changed. This is done by writing a 0 or 1, which will discharge or charge the capacitor respectively. Once the desired charge is reached, the memory cell can be written and the contents stored.

Conclusion:

The R1LV0108ESF-5SR#B0 is a type of memory device designed for use in computers and embedded systems. It is a non-volatile memory device, meaning that it does not require power to retain its stored data. The working principle of the R1LV0108ESF-5SR#B0 is based on storing electrical charge in an array of capacitors, which are read and written through a process of sense amplifying and charging/discharging.

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