R1LV0108ESN-5SR#S0 Allicdata Electronics
Allicdata Part #:

R1LV0108ESN-5SR#S0-ND

Manufacturer Part#:

R1LV0108ESN-5SR#S0

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Renesas Electronics America
Short Description: IC SRAM 1M PARALLEL 32SOP
More Detail: SRAM Memory IC 1Mb (128K x 8) Parallel 55ns 32-SO...
DataSheet: R1LV0108ESN-5SR#S0 datasheetR1LV0108ESN-5SR#S0 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.450", 11.40mm Width)
Supplier Device Package: 32-SOP
Description

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Application Field of R1LV0108ESN-5SR#S0

R1LV0108ESN-5SR#S0 is a type of memory product developed by 3D NAND Flash Technology and is often referred to as 3D-NAND Flash Memory. It is a high-performance, low-power, low-cost memory that can be used in different industries, including consumer electronics, industrial automation, medical, and automotive applications.The 3D-NAND Flash Memory is composed of several layers of 3D memory cells that are stacked on top of each other. The cells are placed in a unique pattern, which allows them to be accessed in multiple directions and makes them much more efficient at storing data. The 3D-NAND Flash Memory can store up to 32TB of data. It is also reliable, resilient and durable, making it a preferred choice for many applications.

Working Principle of R1LV0108ESN-5SR#S0

The 3D NAND Flash Technology is powered by a process that combines etching and lithography. It involves etching vertical controlling gates and interconnects between different 3D memory cells. Then, a lithographically patterned layer of memory is applied to this structure in order to store data.The process of accessing, writing and erasing data is known as programming. The 3D NAND Flash Technology allows the data to be programmed and accessed in multiple directions, making it possible to access data from different angles.The 3D NAND Flash Technology makes it possible to store large amounts of data in relatively small spaces. It also has a higher performance when compared to other types of memory, and is more reliable, resilient and durable than traditional DRAM memory.In summary, the R1LV0108ESN-5SR#S0 is a 3D NAND Flash Memory product that has been designed for various applications. It is reliable, resilient and durable, and offers high performance and low power consumption. The 3D NAND Flash Memory also allows data to be stored and accessed in multiple directions, making it a popular choice for a variety of industries.

The specific data is subject to PDF, and the above content is for reference

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