Allicdata Part #: | R1LV0108ESF-5SI#B0-ND |
Manufacturer Part#: |
R1LV0108ESF-5SI#B0 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Renesas Electronics America |
Short Description: | IC SRAM 1M PARALLEL 32TSOP |
More Detail: | SRAM Memory IC 1Mb (128K x 8) Parallel 55ns 32-TS... |
DataSheet: | R1LV0108ESF-5SI#B0 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Discontinued at Digi-Key |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM |
Memory Size: | 1Mb (128K x 8) |
Write Cycle Time - Word, Page: | 55ns |
Access Time: | 55ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 32-TSOP (8x20) |
Base Part Number: | R1LV0108E |
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The R1LV0108ESF-5SI#B0 is an integrated circuit used in several types of applications, and it is classified as a type of memory. This memory is described as an 8MB static RAM with a low-power 5V single-chip solution. It is often used in applications that require a substantial amount of memory, such as audio and video applications, including home theater systems and surveillance systems. Additionally, this type of memory can also be used in automotive, industrial, medical, and communications applications.
This type of memory is often found in embedded devices, and it is designed to have low power consumption while providing high-speed access. This is made possible by the use of multiplexed I/O structure and a number of power-saving techniques, such as having the chip enter a power-down mode or standby mode when it is not in use. Additionally, this type of memory can also provide an efficient error detection and correction system, which can minimize errors in applications and data storage.
The R1LV0108ESF-5SI#B0 consists of multiple types of memory. It consists of an 8MB static RAM, which provides the user with a large capacity to store a variety of data. Additionally, it also includes a 256K bytes shadow static RAM, which allows the user to store larger amounts of data. Additionally, this chip also contains a 1M bits EDO DRAM as well, which is a type of dynamic random access memory that offers improved data access times.
In terms of the working principle of the R1LV0108ESF-5SI#B0, it operates on the same principles as most other static RAMs, in which an array of memory cells is used to store binary data. Each cell is composed of a transistor, two capacitors, and a latch circuit. The cells are arranged in a matrix and are connected to a sense line, write line, and read line. When the memory receives a write command, the data is written to the corresponding cell and stored. When the memory receives a read command, the data stored in that cell is retrieved and sent to the output.
In terms of the applications for the R1LV0108ESF-5SI#B0, as previously mentioned, it is often used in embedded devices, particularly those applications that require a substantial amount of memory. Since this memory is designed to consume low power while still providing users with high-speed access, it is suitable for applications such as home theater systems and surveillance systems that require quick access to large amounts of data. Additionally, this type of memory can also be found in automotive, industrial, medical, and communications applications due to its low power consumption.
In summary, the R1LV0108ESF-5SI#B0 is an integrated circuit used in several types of applications, and it is classified as a type of memory. This memory is designed to consume low power while providing fast access to a large amount of data, making it ideal for applications that require a substantial amount of memory, such as audio and video applications, including home theater systems and surveillance systems. Additionally, this type of memory can also be used in automotive, industrial, medical, and communications applications. Operationally, this type of memory works similarly to other static RAMs, requiring a write line, a read line, and a sense line.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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R1LV5256ESP-5SI#B0 | Renesas Elec... | 4.81 $ | 317 | IC SRAM 256K PARALLEL 28S... |
R1LV1616RSD-7SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 16M PARALLEL 52TS... |
R1LV0108ESN-5SR#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32SOP... |
R1LV0108ESN-5SR#S0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32SOP... |
R1LV0108ESN-7SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32SOP... |
R1LV0108ESN-7SI#S0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32SOP... |
R1LV0108ESN-7SR#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32SOP... |
R1LV0108ESN-7SR#S0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32SOP... |
R1LV3216RSA-5SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 32M PARALLEL 48TS... |
R1LV3216RSA-5SR#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 32M PARALLEL 48TS... |
R1LV3216RSA-5SR#S0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 32M PARALLEL 48TS... |
R1LV3216RSA-7SR#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 32M PARALLEL 48TS... |
R1LV3216RSA-7SR#S0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 32M PARALLEL 48TS... |
R1LV5256ESA-5SI#B1 | Renesas Elec... | 2.66 $ | 1000 | IC SRAM 256K PARALLEL 28T... |
R1LV0108ESA-5SI#B1 | Renesas Elec... | 2.66 $ | 1000 | IC SRAM 1M PARALLEL 32STS... |
R1LV0108ESF-5SI#B1 | Renesas Elec... | 2.66 $ | 1000 | IC SRAM 1M PARALLEL 32TSO... |
R1LV0216BSB-5SI#B1 | Renesas Elec... | 3.25 $ | 1000 | IC SRAM 2M PARALLEL 44TSO... |
R1LV3216RSA-5SI#B1 | Renesas Elec... | 22.72 $ | 1000 | IC SRAM 32M PARALLEL 48TS... |
R1LV0108ESA-5SI#S1 | Renesas Elec... | 1.93 $ | 1000 | IC SRAM 1M PARALLEL 32STS... |
R1LV0108ESF-5SI#S1 | Renesas Elec... | 1.93 $ | 1000 | IC SRAM 1M PARALLEL 32TSO... |
R1LV0208BSA-5SI#B1 | Renesas Elec... | 3.25 $ | 1000 | IC SRAM 2M PARALLEL 32STS... |
R1LV0208BSA-5SI#S1 | Renesas Elec... | 2.35 $ | 1000 | IC SRAM 2M PARALLEL 32STS... |
R1LV0216BSB-5SI#S1 | Renesas Elec... | 2.35 $ | 1000 | IC SRAM 2M PARALLEL 44TSO... |
R1LV3216RSA-5SI#S1 | Renesas Elec... | 15.91 $ | 1000 | IC SRAM 32M PARALLEL 48TS... |
R1LV5256ESA-5SI#S1 | Renesas Elec... | 1.93 $ | 7022 | IC SRAM 256K PARALLEL 28T... |
R1LV0108ESA-5SI#S0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32STS... |
R1LV0108ESF-5SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32TSO... |
R1LV0108ESF-5SI#S0 | Renesas Elec... | -- | 1000 | IC SRAM 1M PARALLEL 32TSO... |
R1LV0108ESF-5SR#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32TSO... |
R1LV0108ESF-5SR#S0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32TSO... |
R1LV0108ESF-7SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32TSO... |
R1LV0108ESF-7SI#S0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32TSO... |
R1LV0108ESF-7SR#B0 | Renesas Elec... | -- | 1000 | IC SRAM 1M PARALLEL 32TSO... |
R1LV0108ESF-7SR#S0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 1M PARALLEL 32TSO... |
R1LV0208BSA-5SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 2M PARALLEL 32STS... |
R1LV0216BSB-5SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 2M PARALLEL 44TSO... |
R1LV0216BSB-7SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 2M PARALLEL 44TSO... |
R1LV0408DSB-5SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 4M PARALLEL 32TSO... |
R1LV0808ASB-5SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 8M PARALLEL 44TSO... |
R1LV0808ASB-7SI#B0 | Renesas Elec... | 0.0 $ | 1000 | IC SRAM 8M PARALLEL 44TSO... |
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