R1LV0108ESN-5SR#B0 Allicdata Electronics
Allicdata Part #:

R1LV0108ESN-5SR#B0-ND

Manufacturer Part#:

R1LV0108ESN-5SR#B0

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Renesas Electronics America
Short Description: IC SRAM 1M PARALLEL 32SOP
More Detail: SRAM Memory IC 1Mb (128K x 8) Parallel 55ns 32-SO...
DataSheet: R1LV0108ESN-5SR#B0 datasheetR1LV0108ESN-5SR#B0 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 1Mb (128K x 8)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.450", 11.40mm Width)
Supplier Device Package: 32-SOP
Description

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Memory devices are one of the most essential components of modern computers and digital equipment. The R1LV0108ESN-5SR#B0 memory device is one of the newest and advanced memory products in the market. It was designed to provide high performance and reliable data storage for both commercial and industrial use. This article will discuss the application field and working principle of the R1LV0108ESN-5SR#B0 memory device.

The R1LV0108ESN-5SR#B0 memory device is designed to meet the needs of both commercial and industrial applications. It offers highly reliable data storage, high performance, and cost efficiency. The R1LV0108ESN-5SR#B0 is specially designed to support multiple simultaneous applications and to provide fast response time. It has an optimized design that supports the processing of large amounts of data in the shortest possible time.

The R1LV0108ESN-5SR#B0 memory device is an excellent choice for applications such as automotive systems, industrial controllers, aerospace systems, and other embedded and real-time systems. It is also suitable for use in applications such as storage systems and embedded computing devices. Its high-performance and reliable data storage capabilities make it an ideal choice for mission-critical applications, such as military and aerospace systems.

The R1LV0108ESN-5SR#B0 memory device works using a combination of non-volatile memory and a controller. The non-volatile memory stores information which will not be lost even when the power is switched off. The controller ensures the data is properly stored and processed. The non-volatile memory also provides a secure environment for storing information, as it cannot be altered by a hacker or an attacker. In addition, the controller also provides a wide range of features, such as error checking, error detection, and power saving features.

The R1LV0108ESN-5SR#B0 memory device is designed to be highly compatible with a wide variety of applications. It supports interfaces such as Serial Peripheral Interface (SPI), Universal Serial Bus (USB), and Universal Serial Bus with I2C (I2C over USB). In addition, the device also supports a number of systems, such as Windows 7/8/10, Android, and Linux.

The R1LV0108ESN-5SR#B0 memory device has a number of features to ensure its high performance and reliable data storage capabilities. It features a fast read/write speed, which helps the system process large amounts of data quickly and accurately. The device also features a low power consumption to help reduce the power usage of the system. In addition, it also features an error-free detection and correction system, which helps to ensure the data is properly stored and processed.

In summary, the R1LV0108ESN-5SR#B0 memory device is one of the most advanced memory products in the market. It is designed to meet the needs of both commercial and industrial applications. It provides high performance and reliable data storage, and features features such as fast read/write speed and low power consumption. The device is highly compatible with a variety of systems and supports interfaces such as SPI, USB, and I2C over USB. Ultimately, the R1LV0108ESN-5SR#B0 memory device is an excellent choice for memory devices with a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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