Allicdata Part #: | R1LV3216RSA-7SI#B0-ND |
Manufacturer Part#: |
R1LV3216RSA-7SI#B0 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Renesas Electronics America |
Short Description: | IC SRAM 32M PARALLEL 48TSOP |
More Detail: | SRAM Memory IC 32Mb (4M x 8, 2M x 16) Parallel 70... |
DataSheet: | R1LV3216RSA-7SI#B0 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM |
Memory Size: | 32Mb (4M x 8, 2M x 16) |
Write Cycle Time - Word, Page: | 70ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TSOP |
Supplier Device Package: | 48-TSOP |
Base Part Number: | R1LV3216 |
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The R1LV3216RSA-7SI#B0 is a type of memory in the form of a statically random access memory, or more commonly known as SRAM. This type of memory is used as a form of high-speed storage, especially in applications where multiple access is required to store and retrieve data. Due to its high speed and low power consumption, SRAM is often used in embedded microprocessors, embedded systems, and communications equipment.
This type of SRAM memory is composed of a row of 16 holes and 8 columns of data storage cells. Each cell can store 4 bits of data, which can be accessed in 90 or 250ns cycles, depending on processor and integration. The memory includes an initial 7-stage initialization sequence to ensure data integrity, and to reset and initialize the device. The memory can also be programmed in-situ, meaning it does not need to be removed for custom programming.
The data in each cell can be accessed in a variety of ways, from read and write through to instruction fetch. The data can also be written simultaneously and read in parallel, allowing for a high throughput of data. The memory also features error correction and parity checking, which helps to identify and correct errors and finds data discrepancies. This feature helps the memory to maintain data integrity and accuracy.
The R1LV3216RSA-7SI#B0 is mostly used in medium to high performance applications, such as computing and embedded systems. It can also be used in telecommunications and networking, as well as automation and engineering. Because of its versatility and stability, the R1LV3216RSA-7SI#B0 is also an ideal solution for multiplex and address control applications, providing better control and greater access to data and instructions over a short latency period.
In terms of power consumption, the R1LV3216RSA-7SI#B0 is relatively low, featuring a static current of 1.8 mA and quiescent current of 4??A. This low power consumption helps the memory to reduce heat during operation, meaning it can work longer without getting too hot. The memory also features built-in logic to reduce the number of what’s wrote and reads cycles, again utilising the memory’s low power feature.
The working principle of the R1LV3216RSA-7SI#B0 is quite simple. It has two ports; one is used to receive data and the other is used to transmit data. Once given the desired data or instruction, it can then retrieve the data from its memory cells, process it and then send it to the output port. All of this happens in parallel for the highest throughput of data. This type of memory also supports global write and scan operations.
In short, the R1LV3216RSA-7SI#B0 is a high-performance static random access memory (SRAM) used for storing and retrieving data. It features low power consumption, making it suitable for applications that require multiple access to data. This SRAM memory supports read and write operations and provides faster throughput of data thanks to its parallel access. It is used in applications like embedded microprocessors, telecommunications, and automation – whatever the application, the R1LV3216RSA-7SI#B0 offers a reliable and low-power solution.
The specific data is subject to PDF, and the above content is for reference
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