Allicdata Part #: | R6009KNX-ND |
Manufacturer Part#: |
R6009KNX |
Price: | $ 1.25 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 600V 9A TO220FM |
More Detail: | N-Channel 600V 9A (Tc) 48W (Tc) Through Hole TO-22... |
DataSheet: | R6009KNX Datasheet/PDF |
Quantity: | 470 |
1 +: | $ 1.14030 |
10 +: | $ 1.01052 |
100 +: | $ 0.79878 |
500 +: | $ 0.61945 |
1000 +: | $ 0.48904 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FM |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 48W (Tc) |
FET Feature: | Schottky Diode (Isolated) |
Input Capacitance (Ciss) (Max) @ Vds: | 540pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16.5nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 535 mOhm @ 2.8A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 9A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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R6009KNX is a type of field-effect transistor (FET) that belongs to the single semiconductor family. It is a MOSFET that provides a low voltage, high speed switching solution for devices. It is widely used in various applications, including industrial, automotive, and audio applications. The R6009KNX is an advanced FET technology, making it an important chip in the digital age.
The R6009KNX FET works mainly through the principles of electrical engineering. It is a type of transistor that is made up of two separate electrodes. One is called the “gate” and the other is called the “drain”. The gate is charged with an electrical current and this current opens or closes the transistor. The drain then receives a voltage, which will either enable or disable the circuit, depending on the current flowing through it.
A unique feature of the R6009KNX is its quick response time. The FET is able to rapidly switch between an on and off state in only a few nanoseconds, making it ideal for switching applications and high speed computing systems. The device has a low power dissipation and is also capable of optimal power handling. This makes the device an efficient choice in applications where power and performance are important.
The R6009KNX can be used in a range of applications that require high speed, low power switching. Many different types of devices, from computers to electronic toys, rely on this FET in order to work effectively. Its high speed switching capability makes it ideal for digital and industrial applications, such as audio electronics and automotive applications. In automotive applications, the device can be used to switch between the headlights and other electrical components in the vehicle.
The R6009KNX FET is an ideal choice for those looking for a fast switching option with minimal power dissipation and optimal performance. Its high speed and small size make it suitable for a range of uses, making it a popular choice for many different applications. Its low power handling capabilities make it an efficient choice in applications where power and performance are important.
The specific data is subject to PDF, and the above content is for reference
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