Allicdata Part #: | R6007ENX-ND |
Manufacturer Part#: |
R6007ENX |
Price: | $ 1.36 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 600V 7A TO220 |
More Detail: | N-Channel 600V 7A (Tc) 40W (Tc) Through Hole TO-22... |
DataSheet: | R6007ENX Datasheet/PDF |
Quantity: | 348 |
1 +: | $ 1.23480 |
10 +: | $ 1.11573 |
100 +: | $ 0.89655 |
500 +: | $ 0.69733 |
1000 +: | $ 0.57779 |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FM |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 390pF @ 25V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 620 mOhm @ 2.4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 7A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Bulk |
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R6007ENX Application Field and Working Principle
The R6007ENX is a single-gate MOSFET that is widely used in many field applications. This high-performance transistor can be used in motor control and power management applications, as well as in high-performance low-noise application-oriented systems.
As a consequence of its special characteristics, the R6007ENX is an essential component in modern systems. It offers low on-state resistance and high-precision current control, which makes it ideal for use in high-performance and low-noise electronics. Because of these characteristics, the R6007ENX is widely used in high-performance digital systems and other technology.
Working Principle
The R6007ENX is based on the “MOSFET principle”, which is a transistor-level field-effect technology that controls current flow through a gate. This principle builds on the concepts of semiconductor materials, and this enables the transistor to perform with excellent performance and accuracy.
Through the use of a Metal Oxide Semiconductor (MOS) gate, the transistor can be used to transfer a current between two conductors, based on the level of voltage that is applied to the gate. When the proper voltage is applied, the gate will switch from “open” to “closed” and the current will flow between the two conductors. Conversely, when the voltage is reduced, the gate will switch back to “open” and the current will stop flowing.
The R6007ENX provides a very precise level of control over the current transfer, allowing systems designers to precisely regulate the amount of current flowing in their systems. This makes the R6007ENX ideal for use in a variety of applications, ranging from medical, automotive, automotive electronics, telecommunications, and consumer electronics.
Application Field
The R6007ENX can be used in a wide range of applications, especially those that require precision control of current. Due to its low on-state resistance and high-precision current control, the R6007ENX is often used in applications such as motor control on electronic systems, pulse-width modulation applications, and even in light-controlled systems.
In motor control applications, the R6007ENX provides the necessary current to control the device and can even be used for the speed control. In pulse-width modulation applications, the device is used to accurately regulate the current, allowing for a precise and consistent control of power output. In light-controlled systems, the R6007ENX helps to accurately control the time that the lights will remain on or off, as well as the level of brightness.
The R6007ENX also provides robust protection against over-current, temperature, and voltage conditions, ensuring that the device is safe to use in a variety of conditions. This makes the R6007ENX ideal for safety-critical operations and other high-reliability applications. In addition, the R6007ENX is also becoming increasingly used in automotive electronics due to its excellent performance and reliability.
Conclusion
The R6007ENX is a single-gate MOSFET that is widely used in many field applications. It offers low on-state resistance and high-precision current control, making it ideal for use in high-performance and low-noise electronics. The R6007ENX is often used in applications such as motor control, pulse-width modulation, and light-controlled systems, as well as in safety-critical operations and other high-reliability applications. With its excellent performance and reliability, the R6007ENX is quickly becoming an essential component in modern systems.
The specific data is subject to PDF, and the above content is for reference
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