Allicdata Part #: | RJK1001DPP-E0#T2-ND |
Manufacturer Part#: |
RJK1001DPP-E0#T2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 100V 80A TO220 |
More Detail: | N-Channel 100V 80A (Ta) 30W (Tc) Through Hole TO-2... |
DataSheet: | RJK1001DPP-E0#T2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 10000pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 147nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 5.5 mOhm @ 40A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 80A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The RJK1001DPP-E0#T2 is a type of single transistor, or Field-Effect Transistor (FET). This particular model, manufactured by Renesas Electronics, is a depletion mode MOSFET with a few differentiating features. Of most importance are its low on-resistance and its reverse body diode.
The field-effect transistor finds a variety of applications and can be used as an amplifier, chopper, or voltage regulator. Its main principle of operation is based on its controlling gate, the channel of which is the region between the source and the drain. This gate allows electrons, or holes (called holes because of a form of “reverse-current” flow), to travel between the source and drain, when the gate is exposed to a potential difference.
The RJK1001DPP-E0#T2 is a type of FET known as a depletion mode MOSFET, meaning that the transistor operates in a reverse-biased mode. This means that the gate has negative potential, relative to the drain and source, but still holds electrons in the channel. The source and drain will vary their voltages, allowing for a controlled amount of current to travel through the channel. The drain will be able to pull electrons from the channel, and the source will be able to push electrons into the channel, allowing for the movement of the electrons and holes.
The features of this particular model set it apart from other transistors. For one, it has an incredibly low static on-resistance of 1.4 ohms. This means that the voltage drop across the transistor is much lower, and it can efficiently transfer more power. Secondly, it has a reverse body diode, which uses reverse current protection. It will allow current to flow towards the gate, in case of a substrate potential that is greater than the threshold voltage.
RJK1001DPP-E0#T2 is quite versatile. It can be used widely FET based devices, such as an amplifier, chopper, voltage regulator, etc. It has a wide operating temperature range and is suitable for many different operating conditions. Additionally, its low on-resistance make it great for power transfer applications.
In summary, RJK1001DPP-E0#T2 is a single transistor, or Field-Effect Transistor (FET), manufactured by Renesas Electronics. It is a depletion mode MOSFET with a low static on-resistance of 1.4 ohms and also has a built-in reverse body diode. It can be used wide variety of electronics applications, such as amplifiers, choppers and voltage regulators. It is suitable for many operating condition and is great for power transfer applications.
The specific data is subject to PDF, and the above content is for reference
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