RJK1002DPP-E0#T2 Allicdata Electronics
Allicdata Part #:

RJK1002DPP-E0#T2-ND

Manufacturer Part#:

RJK1002DPP-E0#T2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 100V 70A TO220
More Detail: N-Channel 100V 70A (Ta) 30W (Tc) Through Hole TO-2...
DataSheet: RJK1002DPP-E0#T2 datasheetRJK1002DPP-E0#T2 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 30W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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RJK1002DPP-E0#T2: Application Field and Working Principle

The RJK1002DPP-E0#T2 is a high-power, single-purpose MOSFET transistor from chinese manufacturer Shenzhen Richon. This superior device provides high-frequency vibration, temperature control, and various other functions, with maximum voltage and current ratings of 100V and 121A, respectively. Due to its low charge threshold, it is most suitable for applications in audio amplifiers, electric motor control, and various other power-supply applications.

The practical application of the RJK1002DPP-E0#T2 starts with its incorporation in the circuit. It is usually placed between the source and the drain, and can be used as a switch by controlling the channel current. It can also provide linear voltage amplification.

The circuitry containing the RJK1002DPP-E0#T2 is typically covered by an isolated package, in order to reduce interference to the surrounding circuits. The primary electrical connection between the transistor and the power source is established using a pair of contacts.

The common source or common gate configuration of the RJK1002DPP-E0#T2 is specifically a Type-2 MOSFET. It is characterized by a single-gate drain-drain structure, which is capable of providing high-frequency operation in AC circuits. Such circuits typically have low gate capacitances, which allow for improved transient voltage and current characteristics.

When the gate terminal is connected to a positive voltage, it drives a weak current through the gate-source junction. This causes charge carriers (electrons or holes) to become available at the gate electrode, creating an electric field across the channel. This electric field can induce a strong current through the channel and this current is further amplified by the transistor. The purpose of this amplification is twofold. First, it helps to reduce the voltage fluctuations that naturally occur in AC circuits and second, it allows a small signal to actuate a larger current flow.

The conducting channel of the RJK1002DPP-E0#T2 can be controlled by regulating the amount of current flowing through it. This is generally done by either increasing or decreasing the gate voltage. When the gate voltage is increased, the conducting channel becomes wider and more current flows through it. Similarly, when the gate voltage is decreased, the channel width becomes smaller and less current flows through it.

Due to its superior performance, the RJK1002DPP-E0#T2 is the preferred choice for a wide range of high-power applications, such as audio amplifiers, power supplies, controlling electric motors and temperature control. The device’s linear voltage amplification capabilities and its high-frequency operation make it ideal for providing a stable voltage across the power source. It is also suitable for providing superior accuracy in temperature control circuits.

In conclusion, the RJK1002DPP-E0#T2 is a single-purpose MOSFET transistor which has gained a reputation for its exceptional performance in audio amplifiers, electric motor control and various other power-supply applications. With its unique combination of low charge threshold, high-frequency vibration and temperature control, the RJK1002DPP-E0#T2 is undoubtedly one of the best MOSFET transistors available.

The specific data is subject to PDF, and the above content is for reference

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