Allicdata Part #: | RJK1056DPB-00#J5TR-ND |
Manufacturer Part#: |
RJK1056DPB-00#J5 |
Price: | $ 0.87 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 100V 25A LFPAK |
More Detail: | N-Channel 100V 25A (Ta) 65W (Tc) Surface Mount LFP... |
DataSheet: | RJK1056DPB-00#J5 Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.78246 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | SC-100, SOT-669 |
Supplier Device Package: | LFPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 65W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3000pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 41nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 12.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The RJK1056DPB-00#J5 is a single-field effect transistor (FET). It is a type of transistor used in various electrical and computing applications, such as amplifying, switching, and switching audio signals. FETs are used in circuits where a large current or voltage gain is required. This technology is a major advancement over the older bipolar transistors, as FETs can usually deliver a much greater current and voltage gain.
The RJK1056DPB-00#J5 FET is an N-Channel Metal-Oxide-Semiconductor FET (MOSFET). This type of FET consists of two pairs of N-type (positive-charge) semiconductor material that are separated by an oxide layer. The positive charge regions are the source and the drain of the FET. The oxide layer prevents the electrons from passing between the two regions. This creates a reverse bias, which means that the voltage across the two regions must increase in order for electrons to pass. As a result, a large gate-to-source voltage is needed in order to turn the FET on.
The RJK1056DPB-00#J5 FET has several key features that make it suitable for use in a variety of electrical and computing applications. It has a maximum drain-to-source voltage of up to approximately 55 volts, a maximum continuous drain current of up to approximately 2.5 amps, a maximum drain-to-source on-state resistance of 8.5 ohms, and a gate-to-source capacitance of approximately 7000 picofarads (10-12 farads).
The primary application for the RJK1056DPB-00#J5 FET is for using in amplifying, switching, and switching audio signals. It can be used to amplify a signal by providing an increase in the current or voltage levels. It can also be used to switch signals, as it allows for a great amount of control over the signal being switched. It can also be used in various audio applications, as it can be used to amplify or switch audio signals with minimal distortion.
The basic working principle behind an inchannel MOSFET is the same as that of a standard FET. A FET works by controlling the flow of electrons between the source and the drain. By providing a large reverse bias to the MOSFET, it can be turned on or off. When the FET is turned on, the electrons can flow freely, allowing a rise in current or voltage. When the FET is turned off, the electrons cannot pass, causing the current or voltage to drop. The RJK1056DPB-00#J5 FET takes advantage of this principle to provide maximum voltage or current gain in amplifying, switching, and switching audio signals.
The RJK1056DPB-00#J5 FET is just one example of how FETs are used in a variety of electrical and computing applications. FETs provide a great alternative to other types of transistors, as they are typically more efficient, provide a greater current or voltage gain, and are less susceptible to noise. With FETs, it is easier for engineers and designers to create circuits with greater current and voltage control and better signal amplification or switching.
The specific data is subject to PDF, and the above content is for reference
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