RJK1053DPB-00#J5 Discrete Semiconductor Products |
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Allicdata Part #: | RJK1053DPB-00#J5TR-ND |
Manufacturer Part#: |
RJK1053DPB-00#J5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 100V 25A LFPAK |
More Detail: | N-Channel 100V 25A (Ta) 65W (Tc) Surface Mount LFP... |
DataSheet: | RJK1053DPB-00#J5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | SC-100, SOT-669 |
Supplier Device Package: | LFPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 65W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 6160pF @ 10V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 43nC @ 4.5V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 13 mOhm @ 12.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Ta) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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Introduction
RJK1053DPB-00#J5 is an N-channel power MOSFET (Metal Oxide Semiconductor Field Effect Transistor), which is designed for switching and load-carrying applications. It is also used in audio amplifiers and power management systems. The device is based on a vertical double diffused MOS (VDMOS) structure, which offers excellent low on-state resistance and high current handling characteristics.
Application fields
RJK1053DPB-00#J5 is widely used in various applications due to its high current handling potential and low on-state resistance. It can be used in audio amplifiers and power management systems where high current is needed. It can also be used as a switch in automotive and industrial applications where high current levels are required.
In addition, this device can also be used in power converters, variable speed drives, computer and communication systems and home lighting. It is capable of handling large current densities, which makes it well-suited for low voltage applications which require high levels of efficiency.
Working Principle
RJK1053DPB-00#J5 is an N-channel MOSFET, which is capable of carrying and blocking large currents. The MOSFET has two terminals: Source and Drain. The source terminal is connected to the power supply through a metal oxide layer, while the drain terminal is connected to the load. When an appropriate voltage is applied to the gate terminal, the current flow between the source and drain terminals increases, due to an electric field being established in the channel of the MOSFET.
This electric field is proportional to the voltage applied to the gate terminal and the current flowing through the channel is determined by the width and length of the channel. As the applied gate voltage increases, the current increases, and the MOSFET reaches its saturation region. In this region, the amount of current flowing through the channel is limited by the resistance of the metal oxide layer.
Conclusion
RJK1053DPB-00#J5 (N-channel MOSFET) is an ideal device for low voltage applications where high levels of current are needed. It is used in audio amplifiers, power converters and power management systems. The device has excellent low on-state resistance and high current handling characteristics, making it suitable for various applications. The working principle of the device is based on the ability to control and block large currents through the application of a voltage to the gate terminal.
The specific data is subject to PDF, and the above content is for reference
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