RJK1003DPP-E0#T2

Vgs(th) (Max) @ Id:	--
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	25W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	4150pF @ 10V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	59nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	11 mOhm @ 25A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	50A (Ta)
Drain to Source Voltage (Vdss):	100V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to the RJK1003DPP-E0#T2

The RJK1003DPP-E0#T2 is a single MOSFET transistor manufactured by Renesas Electronics. It is designed to be used in applications that require high-efficiency switching and voltage conversion. With its ability to handle a variety of conditions, this transistor is an excellent choice for a wide range of applications.

RJK1003DPP-E0#T2 Application Fields

The RJK1003DPP-E0#T2 is designed for use in a variety of fields, including automotive, industrial, computers, and consumer equipment. In the automotive industry, it can be used in motor control systems, power supplies, and audio system components. In industrial applications, it can be used in control systems, power supply circuits, and signal processing systems. In computers, it can be used in memory circuits and graphic processors. Finally, in consumer equipment, it can be used in audio amplifiers, power supply circuits, and many other applications.

RJK1003DPP-E0#T2 Working Principle

At its most basic, a MOSFET transistor works by controlling the flow of electrons between two circuits. It does this by acting as a gate between the two circuits which can be opened or closed depending on the signal sent to it. The advantage of a MOSFET over other types of transistors is its ability to operate with low power consumption and at high frequencies.The RJK1003DPP-E0#T2 is designed to provide high efficiency, reliability, and low power consumption. It has a channel length of 100 micrometers and a gate width of 3 micrometers, which allows it to achieve high performance when used in high frequency applications. It also has a maximum drain-source voltage of 30V and a maximum gate-source voltage of 20V.

Conclusion

The RJK1003DPP-E0#T2 is a single MOSFET transistor that is designed to be used in a variety of applications, from automotive and industrial to computer and consumer equipment. It is capable of providing high efficiency, reliability, and low power consumption, and it has a variety of features that make it well-suited for a wide range of applications. With its ability to operate at high frequencies and handle a variety of conditions, the RJK1003DPP-E0#T2 is an excellent choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description