RJK1555DPA-00#J0

Vgs(th) (Max) @ Id:	--
Package / Case:	8-PowerWDFN
Supplier Device Package:	8-WPAK
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	30W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2400pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	38nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	48 mOhm @ 12.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	25A (Ta)
Drain to Source Voltage (Vdss):	150V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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Introduction

The RJK1555DPA-00#J0 is a single MOSFET (metal-oxide semiconductor field-effect transistor) that is widely used in a variety of applications, due to its ability to provide high current, low on-state resistance, and fast switching capability. This article will look at the application fields of the RJK1555DPA-00#J0, as well as its working principle.

Application Fields

The RJK1555DPA-00#J0 is a high-speed, high-current, low-on-state resistance, and low-drain-source voltage drop MOSFET, making it suitable for a variety of applications. It is commonly used for power switches, noise filters, and motor drivers.

Power Switches

Due to its fast switching capability, the RJK1555DPA-00#J0 is often used as a power switch. This makes it ideal for applications such as power supply design, voltage regulation, and load switching.

Noise Filters

The low drain-source voltage drop and on-state resistance of the RJK1555DPA-00#J0 makes it ideal for use as a high-precision noise filter. It can be used to reduce unwanted noise and ensure the smooth operation of high-precision circuits.

Motor Drivers

The RJK1555DPA-00#J0 is also widely used in motor control applications. Its high current and fast switching capability make it ideal for applications such as motor speed control, motor position control, and motor current sensing.

Working Principle

The working principle of the RJK1555DPA-00#J0 is based on MOSFET’s output characteristic, which is a function of the amount of voltage applied to the drain-gate and the source-gate of the transistor. There are three regions of operation: cutoff, where the drain-source voltage is near 0 V; linear, where the voltage applied to the MOSFET’s gate gradually increases; and saturation, where the MOSFET is almost completely on.In the cutoff region, no current flows through the device, regardless of the amount of voltage applied. In the linear region, the drain-source voltage is proportional to the voltage applied to the gate. This is known as the transconductance region, as it is possible to control the amount of current flowing through the device by controlling the voltage applied to the gate. Finally, in the saturation region, the drain-source voltage is almost completely determined by the drain-gate voltage. The behavior of the device can be modelled with the following equation:V_ds = Is(V_gs, V_th) V_ds is the drain-source voltage, Is is a function of the gate-source voltage and the threshold voltage, V_gs and V_th respectively.

Conclusion

The RJK1555DPA-00#J0 is a high-speed, high-current, low-on-state resistance, low-drain-source voltage drop MOSFET, making it well suited for a variety of applications. It is commonly used for power switches, noise filters, and motor drivers. Its working principle is based on MOSFET’s output characteristic, which is a function of the amount of voltage applied to the drain-gate and source-gate of the transistor. With these capabilities, the RJK1555DPA-00#J0 is an ideal single MOSFET solution for many applications.

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