RJK1002DPN-E0#T2 Allicdata Electronics
Allicdata Part #:

RJK1002DPN-E0#T2-ND

Manufacturer Part#:

RJK1002DPN-E0#T2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 100V 70A TO220
More Detail: N-Channel 100V 70A (Ta) 150W (Tc) Through Hole TO-...
DataSheet: RJK1002DPN-E0#T2 datasheetRJK1002DPN-E0#T2 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 150W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 6450pF @ 10V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 35A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The application field and working principle of RJK1002DPN-E0#T2 is an essential element in transistors, FETs and MOSFETs.

Generally speaking, RJK1002DPN-E0#T2 is a integrated MOSFET within a single package, which needs no external ESD protection. It is suitable for medium and low side drive; features fast slew rate and Ultra Low On-Resistance capability, which enables applications such as lighting, motor, and heating etc.

In practice, it features a RDS(ON) of 0.0035Ω, maximum gate source voltage of -20V and maximum drain source voltage of -20V. This, along with its low on resistance, makes it suitable for high side drive as well.

The working principle of this MOSFET is based on the very basic operating mode of a MOSFET—conventional or enhancement MOSFET. It works by utilizing an electric field to control the current passing through the device. In a basic MOSFET, there are three terminals, namely the source, gate and drain. Voltage is applied to the gate in order to create an electric field between the gate and drain. This field allows current to pass through the device (or, in the case of a MOSFET, the channels of the device) when the correct voltages are applied to the gate and drain.

The gate of the RJK1002DPN-E0#T2 MOSFET is N-type and is also usually referred to as an insulated gate type MOSFET. When there is no voltage applied to the gate, electrons within the drain cannot pass through the gate, resulting in no current flow. When voltage is applied to the gate, the electrons become attracted to the gate, resulting in a positive charge being applied to the channel. This increases the conductivity of the channel and, in turn, allows current to flow. In this way, the device works as a switch, regulating the current passing through it, depending on the input voltage applied to the gate.

Due to the above features, the RJK1002DPN-E0#T2 device is a very useful element to be used in various application fields such as light emitting diode (LED) strips, power inverters, electronic motor speed controllers, and 12/24V battery charger. It is also used in industrial automation and optical communications.

In summary, the application field and working principle of RJK1002DPN-E0#T2 is essential in transistors, FETs, and MOSFETs applications. It can be used in various fields due to its convenience, low on-resistance capability and fast slew rate, which is better than other single MOSFETs.

The specific data is subject to PDF, and the above content is for reference

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