Allicdata Part #: | RJK5012DPE-00#J3-ND |
Manufacturer Part#: |
RJK5012DPE-00#J3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 500V 12A LDPAK |
More Detail: | N-Channel 500V 12A (Ta) 100W (Tc) Surface Mount 4-... |
DataSheet: | RJK5012DPE-00#J3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | SC-83 |
Supplier Device Package: | 4-LDPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 620 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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。Introduction
The RJK5012DPE-00#J3 is a single N-channel MOSFET transistor, which is quickly becoming a popular choice among those looking for a fast, efficient and low-cost solution to their power management needs. This MOSFET transistor is typically used in switching, voltage regulation, and motor control applications, as well as in general power management applications. This article will explore the application field and working principle of the RJK5012DPE-00#J3 MOSFET transistor in greater detail.
RJK5012DPE-00#J3 Application Field
The RJK5012DPE-00#J3 has the capabilities to support a wide range of applications, from low- to high-power. It has the ability to handle up to 40V and 110A, making it a flexible solution for applications that require higher current and voltage levels. It is rugged enough to handle open- and closed-loop inductive loads, making it suitable for applications such as motor control, switch-mode power supplies, and battery management systems. In addition to its robust construction, the RJK5012DPE-00#J3 also features a hysteresis circuit, which makes it well-suited for use in applications that require pulse-width modulation and signal modulation.
The RJK5012DPE-00#J3 is also well-suited for audio applications, such as audio amplifiers and load-shifting power supplies. It is also popularly used in communication systems, robotics, AC and DC motor drives, industrial control and automation systems, and general power management systems.
RJK5012DPE-00#J3 Working Principle
The RJK5012DPE-00#J3 is a single N-channel MOSFET transistor, which means that it uses a negative charge to originate and carry a current. This MOSFET is constructed out of silicon, and it is created by inducing an electric field across a dielectric material. When this electric field is applied, it creates an electric field between the anode and the cathode, allowing the current to flow from the gate to the source. The voltage level at the gate then determines the current flowing from the source to the drain.
The RJK5012DPE-00#J3 is a robust and reliable device, featuring a wide voltage and current range, and excellent on-resistance ratings. It also features a hysteresis circuit, which allows it to be used in applications that require pulse-width modulation and signal modulation. The device also has low power losses and fast switching speed, making it an ideal choice for a variety of applications.
Conclusion
The RJK5012DPE-00#J3 is a robust and reliable single N-channel MOSFET transistor, which is quickly becoming a popular choice among those looking for a fast, efficient and low-cost option for their power management needs. With its wide range of application fields and working principle, the RJK5012DPE-00#J3 is perfect for applications that require high current and voltage levels, audio applications, communication systems and motor control applications.
The specific data is subject to PDF, and the above content is for reference
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