Vgs(th) (Max) @ Id:	--
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	29.5W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	765pF @ 25V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	23nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	850 mOhm @ 5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	10A (Ta)
Drain to Source Voltage (Vdss):	500V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Discontinued at Digi-Key
Packaging:	Tube

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Transistors - FETs, MOSFETs - Single

RJK5035DPP-E0#T2 application field and working principle

Field effect transistors (FETs) are unipolar devices that use an electric field to control the flow of electrons between two terminals, the source and the drain. The most commonly used type of FETs are metal-oxide-semiconductor field effect transistors (MOSFETs). An RJK5035DPP-E0#T2 MOSFET is a voltage-controlled device that is available in a single N-channel type.

What Is MOSFET and Its Application Field?

A MOSFET is a type of Field-effect transistor (FET) that is capable of amplification and switching. It works by using voltage to control the resistance within the device. MOSFETs are used in many electronic devices, including amplifiers and switching systems. They are particularly useful for applications requiring low power consumption, as well as for providing high frequency operation and fast switching speeds. They also have low noise levels, higher input impedance and high frequency capabilities.MOSFETs are frequently used in power supplies and power converters, inverters, switching regulators, motor speed and position control, audio frequency amplifiers, high frequency radio communications, and consumer-quality audio amplifiers. In these applications, MOSFETs offer high input impedance and fast switching speeds, enabling them to operate at lower power levels than many other types of transistors.The RJK5035DPP-E0#T2 is a single N-channel type MOSFET. It is constructed using Gallium Arsenide (GaAS) substrate and has an operating temperature range of -55-125 °C. The maximum drain current is rated at 1.3A. The maximum drain-source voltage is rated at 32V and the maximum gate-source voltage is rated at -16V. The RDS(on) resistance is specified at 0.82 ohms, which is the amount of opposition that is created when the FET is operated under maximum conditions.

How Does It Work?

The way in which the RJK5035DPP-E0#T2 MOSFET works is by controlling the flow of electrons between the source and the drain. An electric field is produced between two terminals, which is known as the gate and the source. When a voltage is applied to the gate, an electrostatic field is created which can influence the electrons on the surface of the MOSFET. This electrostatic field then acts as a conducting channel, allowing electrons to move between the source and the drain.In order to operate correctly, the gate-source voltage must be negative relative to the source in order to produce the electric field. This means that the more negative the voltage applied to the gate, the larger the electric field and the more electrons will be conducted. The electric field can be used to control the on-resistance of the MOSFET, which is referred to as the RDS (on) resistance.

Conclusion

The RJK5035DPP-E0#T2 MOSFET is a single N-channel type device that is widely used in many electronic applications due to its low power consumption and fast switching speeds. The MOSFET works by using an electric field to control the flow of electrons between the source and the drain. The amount of resistance created when the FET is operated under maximum conditions is known as the RDS(on) resistance. By adjusting the gate-source voltage, the RDS(on) resistance can be controlled, allowing precise modulation of the current passing through the MOSFET.

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