Allicdata Part #: | RJK5012DPP-E0#T2-ND |
Manufacturer Part#: |
RJK5012DPP-E0#T2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 500V 12A TO220 |
More Detail: | N-Channel 500V 12A (Ta) 30W (Tc) Through Hole TO-2... |
DataSheet: | RJK5012DPP-E0#T2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 30W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1100pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 620 mOhm @ 6A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 12A (Ta) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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RJK5012DPP-E0#T2 is a type of single MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), which is a three-terminal, unipolar (single) device used to electronically control the electrical properties of a circuit. It is made up of three main components: the source, the gate, and the drain. The source and the drain are connected to electrodes and the gate is used to regulate the flow of current between the source and drain. It is also an active device, meaning that it can generate power and control the flow of current based on the input signal given.
RJK5012DPP-E0#T2 is specifically designed for switching, amplifying and tuning applications in voltage and current-controlled devices. It is commonly used for power control applications that require a high input impedance and low output impedance. It is also capable of providing high voltage gain and high current transfer ratio, making it suitable for a wide range of applications.
The RJK5012DPP-E0#T2 is capable of handling a wide range of voltage and current, including AC and DC. It has an operating temperature range of -55°C to 150°C. It is capable of handling up to 100V and 12A, and is capable of switching as fast as 20kHz. The device also has a low ON resistance of 150mΩ, and a high OFF resistance of 25KΩ, making it suitable for a wide range of switching applications.
The working principle behind the RJK5012DPP-E0#T2 is fairly simple. When the gate voltage is increased, the device will allow more current to flow through its drain and source. Conversely, when the gate voltage is decreased, the amount of current allowed to flow through the drain and source will decrease. This simple process is used to control the electrical current flowing through circuits.
One of the most common applications of the RJK5012DPP-E0#T2 is power control. It is often used to control the power supply of an electronic device by regulating the voltage and current. It is also used for controlling the current of high-frequency power supplies, such as those used in inverters and converters. It can also be used in switching circuits, amplifier circuits, and voltage-sensing circuits. In each application, the device will act as a switch, controlling the on and off states of the circuit.
In conclusion, the RJK5012DPP-E0#T2 is a single MOSFET that is used mainly for power control and switching applications. It can be used to regulate the voltage and current of an electronic device, as well as to control the on and off states of a circuit. The device is capable of handling a wide range of voltages and currents, and has a low ON resistance and high OFF resistance, making it suitable for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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