RJK5018DPK-00#T0 Allicdata Electronics
Allicdata Part #:

RJK5018DPK-00#T0-ND

Manufacturer Part#:

RJK5018DPK-00#T0

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 500V 35A TO3P
More Detail: N-Channel 500V 35A (Ta) 200W (Tc) Through Hole TO-...
DataSheet: RJK5018DPK-00#T0 datasheetRJK5018DPK-00#T0 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 200W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 155 mOhm @ 17.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Ta)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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RJK5018DPK-00#T0 is a single-channel mosfet which belongs to the category of transistors-FETs. It is also known as a metal oxide semiconductor field effect transistor (MOSFET). These transistors are used in various applications to switch electric signals, amplify them, or otherwise control them.

They are generally well known for their sensitivity to electric fields. A MOSFET mainly acts as a voltage controlled resistance, which means the resistance of the transistor can be controlled by the applied voltage. The resistance is measured in terms of ohms, which is known as the linear region of the transistor. This property of the MOSFET makes it ideal for use in many power related circuits.

RJK5018DPK-00#T0 is a P-type MOSFET which means that it is designed to control the flow of current in the opposite direction of the flow of current in the N-type MOSFET. The design of this MOSFET enables it to control the current flow based on the input voltage applied to it. The output current is then determined by the compliance voltage level of the device.

RJK5018DPK-00#T0 is mainly used in low power short distance applications such as controlling solenoids, infrared sensors, and motor drives. It is equipped with built-in ESD protection and is highly reliable. Its input voltage can be varied from 5V to 12V, making it suitable for both digital and analogue applications.

RJK5018DPK-00#T0 can be employed to construct a wide range of circuits such as an H-bridge, multiplier, voltage regulator, power converter, MOSFET switch, and for many other applications. Its working principle is based on the current flow between two points, which is etablished by the applied voltage across the MOSFET. This voltage creates an electric field between the two points, which in turn causes the current to flow. In this way, the MOSFET is able to switch between two or more states.

Its main advantage is its low power consumption, which makes it ideal for use in various situations. The device is also highly reliable and has superior ESD protection, making it an excellent choice for applications that require short circuit protection. This MOSFET is also designed with an integrated gate driver, which helps to increase the switch performance and overall efficiency.

Overall, the RJK5018DPK-00#T0 is an outstanding MOSFET which is used in a variety of applications. It is versatile, highly reliable, and provides superior protection from electrostatic discharge. It is also equipped with a built-in gate driver which further increases its power efficiency. All these aspects make it an excellent choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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