Allicdata Part #: | RJK5013DPE-00#J3-ND |
Manufacturer Part#: |
RJK5013DPE-00#J3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 500V 14A LDPAK |
More Detail: | N-Channel 500V 14A (Ta) 100W (Tc) Surface Mount 4-... |
DataSheet: | RJK5013DPE-00#J3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | SC-83 |
Supplier Device Package: | 4-LDPAK |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1450pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 38nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 465 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Ta) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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RJK5013DPE-00#J3 is a high dv/dt tradeoff of −50 V/ns and low gate charge FET. It is a high current MOSFET transistor (metal–oxide–semiconductor field-effect transistor) which is specifically designed to provide reliable high current switching capability at high switching frequencies. The MOSFET transistor is designed for applications such as solenoid and lamp control, DC or AC motor drive, as well as for switching in power supplies, lighting control, or other medium-power applications.
When a voltage is applied to a MOSFET transistor, it creates an electric field that causes current to flow in between two terminals on the transistor which are referred to as the drain and source. The gate of the MOSFET transistor is connected to the control circuit and is required to control the flow of current between the drain and source. By applying different voltages to the gate of the transistor, it will determine whether or not the current flow is allowed to pass through the gate, thus turning the device on or off.
The RJK5013DPE-00#J3 MOSFET transistor is specifically designed to work at higher frequencies with high transient dV/dt immunity and low gate charge. The dV/dt of −50 V/ns is ideal for driving solenoid and lamp applications, as it allows for a much faster rise as well as fall time, whereas the low gate charge will reduce unnecessary power dissipation. The overall benefits of this include a less heat generation, decreasing power losses, and a greater power efficiency rate, which makes the MOSFET one of the most popular transistors for medium power applications.
The RJK5013DPE-00#J3 MOSFET transistor is designed to be integrated into power supplies and lighting control products, as well as for solenoid and lamp control, DC or AC motor drive applications. The low gate charge of this transistor improves the power efficiency significantly and is ideal for applications that require a fast switching frequency with a high current capability. Moreover, its high dV/dt immunity ensures that it can be used in applications with a high transient voltage.
In conclusion, the RJK5013DPE-00#J3 MOSFET transistor is an excellent choice for a wide variety of applications from DC or AC motors to power supplies and lighting control. Its high dV/dt immunity and low gate charge give it an edge over other transistors, making it perfect for high current applications and for those that require a faster switching frequency. It is an ideal choice for those seeking a reliable, power-efficient, and cost-effective solution.
The specific data is subject to PDF, and the above content is for reference
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