Allicdata Part #: | RJK5026DPP-M0#T2-ND |
Manufacturer Part#: |
RJK5026DPP-M0#T2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Renesas Electronics America |
Short Description: | MOSFET N-CH 500V 6A TO220 |
More Detail: | N-Channel 500V 6A (Ta) 28.5W (Tc) Through Hole TO-... |
DataSheet: | RJK5026DPP-M0#T2 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | -- |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FL |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 28.5W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 440pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 1.7 Ohm @ 3A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 6A (Ta) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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RJK5026DPP-M0#T2 is a small signal upgrade of the popular dual SIP MOSFET. This device is a small sized, high-speed MOSFET that can achieve fast switching times and have excellent suppression of switching noise and its small size makes it ideal for applications with space constraints.
This device is available in a variety of configurations, such as a single gate, dual gate, and even so on. Each of these configurations will provide different characteristics that make them suitable for different application fields. The single gate configuration is the simplest type, as it requires only one gate to control the operation of the device. This type of configuration is most commonly used in voltage switch applications, where the single gate provides an easy way to switch between different voltage levels.
The dual gate configuration however can provide more flexibility, as it provides two different gate signals that can control the switching of the device. This type of configuration is often used in applications such as power supply circuits and high-power circuits, as it provides faster switching times and greater control while reducing noise levels. In addition, the two gates can also be used to provide enhanced protection against ESD, increased temperature range, and improved efficiency in applications such as switching power supplies.
The working principle of the RJK5026DPP-M0#T2 is based on the dual-gate MOSFET configuration. The two gates that are used are connected to each other via an ohmic resistor, which acts as part of the feedback loop. When the gate current flows, it creates a positive feedback system within the transistor, allowing for a fast switching time and low current to flow through the device. This helps to reduce the amount of energy that is wasted in switching between different voltages and also helps to increase the efficiency of the application.
The RJK5026DPP-M0#T2 is a great choice for applications that require fast switching times or require low levels of noise. It is also an ideal choice for applications that require high-power or high-temperature operation, as it can provide superior protection against ESD and improved efficiency. With its small size and high-speed switching capabilities, the RJK5026DPP-M0#T2 is sure to be the perfect choice for any of these applications.
The specific data is subject to PDF, and the above content is for reference
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