RJK5013DPP-E0#T2

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RJK5013DPP-E0#T2 is a SMD-type surface-mount FET with a maximum drain-source voltage of 150 V and a gate-source voltage of 10 V to 20 V. It is estimated that the power dissipation of this MOSFET is 0.6 W. This device is equipped with a P-FET channel with an IC-type on-resistance of 11 Ω at VGS=10 V and a drain-source on-resistance of 40 mΩ at VDS=30 V.

The RJK5013DPP-E0#T2 is mainly used in automotive and industrial applications, such as load switching, gate driver circuits, gate drive circuits, gate drive and power amplification. It can also be used as a linear regulator in DC-DC converters and as a buffer amplifier in high speed logic gates. Additionally, it is used as a switch in consumer products, including smart phones and home appliances.

The RJK5013DPP-E0#T2 functions as a voltage-controlled switch which consists of five terminals, a source, gate, drain, body, and an external lead. The source and drain leads control the current flow and the gate control is used to regulate the voltage-dependent threshold voltage of the device. When a voltage is applied to the gate lead, the device will conduct current between the source and drain terminals depending on the voltage applied. When the voltage exceeds the threshold voltage, the MOSFET will turn “on” or be in a “conducting” state. Conversely, if the voltage is below the threshold voltage, the MOSFET will remain in the “off” or non-conducting state.

The RJK5013DPP-E0#T2 relies on electrostatic protection to produce a low-resistance path for transient current. This protection limits the drain-source voltage and provides an isolation between the body and source pin. This is accomplished by utilizing a very thin dielectric layer between the source and the body. This dielectric layer is connected to the source and therefore, can be characterized as a parallel voltage divider circuit.

The RJK5013DPP-E0#T2 is a robust FET that is popularly used in power supply and signal conditioning applications. Its low threshold voltage, superior thermal characteristics and high gate-source charge make it an ideal component for high-frequency switching. Additionally, its self-limiting current makes it suitable for driving high capacitance loads. This component is best suited for applications requiring fast switching, such as high speed logic gates and timers.

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