RJK5014DPP-E0#T2 Allicdata Electronics
Allicdata Part #:

RJK5014DPP-E0#T2-ND

Manufacturer Part#:

RJK5014DPP-E0#T2

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Renesas Electronics America
Short Description: MOSFET N-CH 500V 19A TO220
More Detail: N-Channel 500V 19A (Ta) 35W (Tc) Through Hole TO-2...
DataSheet: RJK5014DPP-E0#T2 datasheetRJK5014DPP-E0#T2 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: --
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 390 mOhm @ 9.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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RJK5014DPP-E0#T2 is a type of single field-effect transistor (FET) or metal-oxide-semiconductor FET (MOSFET). FETs are transistors, which are semiconductor devices that amplify or switch electrical signals. Each type of FET has a different structure, and this single FET structure is the most common. This FET can be used in power electronics, such as inverters, power supplies, and motor drives, as well as in data communications, consumer electronics, and other commercial applications.

The working principle of the RJK5014DPP-E0#T2 is based on the behavior of electrons in semiconductors. Its main components are source and drain regions. The source and drain regions are separated by a thin semiconductor layer known as the oxide layer. A semiconductor channel is formed between the two regions. This channel is filled with electrons that can move freely under an applied voltage. When an electric field is applied, the electrons in the channel are driven from the source region to the drain region, causing a current to flow through the FET.

In addition to the source, drain, and oxide layer, the FET also contains a gate electrode, which is located above the oxide layer. When a voltage is applied to the gate, an electric field is created between the gate and the source and drain regions. This electric field affects the electron concentration in the channel, which in turn modulates the current flowing through the FET.

The RJK5014DPP-E0#T2 can be used in power electronics due to its ability to handle large currents while maintaining low on-state resistance. In these applications, the FET can be used to switch high currents, allowing it to be used in motor drives, power supplies, and inverters. Furthermore, the FET can be used in data communications circuits as its ability to quickly switch high currents makes it ideal for data amplification, modulation, and demodulation. The FET can also be used in consumer electronics, such as audio amplifiers and switching power supplies, where it is used to switch high currents at low voltages.

In summary, the RJK5014DPP-E0#T2 is a type of single FET, which is mainly used in power electronics, data communications, and consumer electronics. It works by modulating the current flow through a semiconductor channel using an electric field created by a gate voltage. This FET can be used in motor drives, power supplies, inverters, audio amplifiers, and switching power supplies.

The specific data is subject to PDF, and the above content is for reference

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