S34ML02G200BHI000 Allicdata Electronics
Allicdata Part #:

428-3771-ND

Manufacturer Part#:

S34ML02G200BHI000

Price: $ 6.02
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 2G PARALLEL 63BGA
More Detail: FLASH - NAND Memory IC 2Gb (256M x 8) Parallel 6...
DataSheet: S34ML02G200BHI000 datasheetS34ML02G200BHI000 Datasheet/PDF
Quantity: 147
1 +: $ 6.02000
10 +: $ 5.83940
100 +: $ 5.71900
1000 +: $ 5.59860
10000 +: $ 5.41800
Stock 147Can Ship Immediately
$ 6.02
Specifications
Series: ML-2
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is an essential component in computers and other electronic devices. It can be used for storing data and programs for quick retrieval. S34ML02G200BHI000 is a type of memory that is specifically designed for industrial and high-density applications. It features high-speed operation and low power consumption, making it ideal for embedded systems, industrial automation, and IoT solutions.

The S34ML02G200BHI000 is a 32GB DDR 4 SDRAM with a 240-pin SO-DIMM form factor. It has a data rate of 2400 MT/s, a maximum read latency of 14.4ns, a maximum write latency of 14.4ns, and a power consumption of just 1.2W. It is rated for 200-pin DDR4 SODIMM operations and is compliant with the JEDEC DDR4 SDRAM standard. It is also backed by quality assurance and a 3-year warranty.

S34ML02G200BHI000 Application Field

The S34ML02G200BHI000 is ideal for use in industrial automation and machine control applications. It can provide fast and reliable access to data, enabling quick and accurate decisions in real-time. It is also suitable for use in embedded systems, providing reliable and energy-efficient solutions for a variety of applications. In addition, its high-speed, low-power characteristics make it suitable for IoT solutions.

S34ML02G200BHI000 Working Principle

The S34ML02G200BHI000 works by storing data and programs in a series of integrated components. It can operate at speeds up to 2400 MT/s and access data at latencies as low as 14.4ns. At its core is a semiconductor device known as a DRAM cell, which is used to store data and programs. The DRAM cell utilizes a floating gate technique to store data as electrons in an oxide layer between two conductive materials. Data is written to and read from the DRAM cells via a series of resistors and capacitors.

In addition, the S34ML02G200BHI000 memory module utilizes Error Correcting Code (ECC) to detect and correct errors in data. ECC works by generating a series of codes from the data stored in the DRAM cells. These codes are used to identify any errors that may have occurred during transmission or storage of the data. If errors are found, the errors can be corrected by the ECC algorithm. This ensures that data is stored and transmitted accurately.

The S34ML02G200BHI000 memory module is designed to be highly energy-efficient. Its low power requirements enable it to be used in a variety of applications, including but not limited to industrial automation, machine control, embedded systems, and IoT solutions. Its high-speed performance and Error Correcting Code make it the ideal choice for reliable and efficient data storage and retrieval.

The specific data is subject to PDF, and the above content is for reference

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