S34ML08G201BHI003 Allicdata Electronics
Allicdata Part #:

S34ML08G201BHI003-ND

Manufacturer Part#:

S34ML08G201BHI003

Price: $ 9.66
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 8G PARALLEL 63BGA
More Detail: FLASH - NAND Memory IC 8Gb (1G x 8) Parallel 63-...
DataSheet: S34ML08G201BHI003 datasheetS34ML08G201BHI003 Datasheet/PDF
Quantity: 1000
2300 +: $ 8.78311
Stock 1000Can Ship Immediately
$ 9.66
Specifications
Series: ML-2
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 8Gb (1G x 8)
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)
Description

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The S34ML08G201BHI003 memory device is a 3D NAND Flash memory device developed by Samsung. It is available in a wide variety of packages, including TSOP Type II, BGA, and eMMC, and is designed for use in applications requiring high performance and low power consumption. The device has a maximum capacity of 8GB and is available in both single-die and multi-die configurations.

The S34ML08G201BHI003 memory device uses Floating Gate technology, which is a form of non-volatile memory technology. It works by having a floating gate located between two conductive layers. When an electrical charge is applied to the gate, it creates a voltage potential that is stored in the gate. This voltage potential is then used to read, write, and erase data on the memory device.

The S34ML08G201BHI003 memory device is commonly used in products such as smartphones, digital cameras, and computer peripherals. The device provides high read performance, low power consumption, and is suitable for a variety of operating conditions. It is also capable of reading and writing data at speeds up to 200MB/s, making it ideal for applications that require rapid data access.

In addition to its fast read and write speeds, the S34ML08G201BHI003 memory device is also designed to be durable and reliable. The device has an EnduraGuard feature, which is designed to protect the device from accidental damage or wear. It also has a power safe feature, which keeps the memory device from powering up during unexpected power failures.

The S34ML08G201BHI003 memory device also provides enhanced security features. The device has an encrypted system, which prevents unauthorized data access. Additionally, the device has built-in error correction capabilities, which ensure the integrity of data stored on the device.

Overall, the S34ML08G201BHI003 memory device is an ideal choice for a wide range of applications that require reliable and high-performance memory. It is available in a variety of packages and has a maximum capacity of 8GB. The device is also designed to be durable and reliable, providing enhanced security features and error correction capabilities. With its fast read and write speeds, the device is ideal for applications that require rapid data access.

The specific data is subject to PDF, and the above content is for reference

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