S34ML04G100BHI003

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

• S34ML04G100BHI003 Application Field
  • S34ML04G100BHI003 is a standard 2Gb multi-level cell (MLC) NAND Flash memory, which is widely used in embedded applications such as automotive, consumer electronics, and mobile phones.
  • It is a 64-bit, 3-V NAND Flash memory with a 4-bit data bus. The device supports both an SLC and MLC NAND Flash architecture.
  • The device has a host interface that supports multiple reads, multiple programming, multi-bit ECC, refresh, erase, and block erase operations.
  • It has an 8K-byte page size with a 512 K bit page spare area plus a page write buffer.
  • It has a 1M-byte block size with a 64 K bit block spare area plus a block write buffer.
• S34ML04G100BHI003 Working Principle
  • S34ML04G100BHI003 is a high-performance NAND Flash memory with advanced features and low power consumption. It features a simple two-level command interface. It supports up to four chip selects with two data bits each, and each chip select can have its own individual timing.
  • The device supports advanced ECC functions such as error correction and detection, as well as multi-bit error correction. This ensures greater data integrity and accuracy by correcting multiple errors on a single page.
  • The device also includes additional features such as write-verify, write-buffer programming, and on-the-fly programming. These features provide flexible programming options, and reduce the need for error checking and feature verification.
  • The device also supports multiple die operation, allowing for a reduction in device size and power consumption.
  • S34ML04G100BHI003 is available in various packages and configurations, which allows for optimization of performance and cost.

The specific data is subject to PDF, and the above content is for reference