S34ML08G201TFA003

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The S34ML08G201TFA003 is a multi-level cell (MLC) NAND flash memory product, produced by Japanese manufacturer Toshiba. It is a non-volatile memory chip, which means that data stored on the chip will remain even when there is no supplied power. This type of memory is used in many digital and electronic products such as digital cameras, USB flash drives, and smartphones.

The S34ML08G201TFA003 is a 8Gb memory chip which is commonly used in embedded OS type of system. It offers improved read, write, and erase performance for internal data storage and is capable of transferring data faster than conventional memory technology due to its NAND architecture. It also offers enhanced energy efficiency, as it consumes less power than other competing products. This product is available in various form factors including TSOP, BGA, and MFOP packages, making it suitable for applications in numerous consumer electronics.

The S34ML08G201TFA003 is a 8Gb NAND flash memory product that can store up to 2GB of data. This product contains two charge trap layers, which reduce the risk of data corruption during writing and erasing. The chip also contains 65nm process technology for enhanced speed, low write, and erase noise, and maximum reliability. The NAND chip is designed to provide an energy-efficient, durable, and cost-effective solution to various embedded applications.

The S34ML08G201TFA003 is used in a wide range of applications, including portable devices such as cameras, camcorders, smartphones, and MP3/MP4 players. In addition, it is also used in automotive, industrial, and medical systems. This product offers fast write/erase operations and low power consumption, along with high endurance and long lifespan. The S34ML08G201TFA003 can also be used in digital content, data logging, and other memory intensive applications.

The working principle of the S34ML08G201TFA003 is based on the NAND flash technology. In NAND flash memory, data is stored and retrieved from the chip in blocks, as opposed to bytes in DRAM and SRAM memories. In a NAND memory, transistors are arranged in a grid and electrically coupled in a series connection. Each transistor acts as a single memory cell, which consists of two binary positions, a "1" and a "0". Therefore, the total amount of information that can be stored in one bit is two bits. Read, program, and erase operations are performed by applying a voltage to the appropriate cell.

The S34ML08G201TFA003 is thus an ideal choice for embedded applications that require a fast, reliable, and cost-effective memory solution. Its small size, low power consumption, and high speeds make it an ideal solution for embedded systems. Its features are also considered to be an edge over competing products. Additionally, its advanced features make it an ideal choice for memory intensive applications, where performance and reliability are essential.

The specific data is subject to PDF, and the above content is for reference