S34MS08G201BHB000 Allicdata Electronics
Allicdata Part #:

S34MS08G201BHB000-ND

Manufacturer Part#:

S34MS08G201BHB000

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 8G PARALLEL
More Detail: FLASH - NAND Memory IC 8Gb (1G x 8) Parallel 45ns
DataSheet: S34MS08G201BHB000 datasheetS34MS08G201BHB000 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: Automotive, AEC-Q100, MS-2
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 8Gb (1G x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Description

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Memory plays a critical role in the operation of electronic equipment, allowing for the storage of data for a long period of time. The S34MS08G201BHB000 is a specialized type of memory that has a variety of applications in the field of electronics. This type of memory is also commonly used in industrial and automotive applications. In this article, we will discuss the application field and working principle of the S34MS08G201BHB000.

Applications

The S34MS08G201BHB000 is a type of specialized flash memory that is designed for use in a variety of applications in the electronics field. It is most commonly used in automotive and industrial sectors, as its high reliability makes it suitable for use in these harsh environments. The S34MS08G201BHB000 can also be used in other areas such as medical equipment and data communication systems. Additionally, this type of memory is also increasingly being used in embedded systems and in the automotive infotainment industry.

Working Principle

The S34MS08G201BHB000 is a type of flash memory which utilizes several different types of operations in order to store data. The main components that make up a S34MS08G201BHB000 memory are a flash array, an addressing system, and an erase/write cycle control circuit. The flash array is composed of a large number of electrically programmable cells, each of which is able to hold a certain amount of data. The addressing system is used to access each cell individually, while the erase/write cycle control circuit is used to control the programming and erasing of the data stored in each cell. The data stored in each cell is stored as an electrical charge, which is maintained until the cell is specifically programmed to erase it.

The S34MS08G201BHB000 is designed to allow for quick and reliable data access, as well as high levels of data storage capacity. This type of memory is capable of storing up to 8Gbits of data. It is also capable of a number of write/erase cycles, allowing for a number of different applications to be used with the same device. Additionally, the S34MS08G201BHB000 is capable of operating over a wide range of temperature and voltage, making it suitable for use in a variety of environments.

The S34MS08G201BHB000 is a type of flash memory that is becoming increasingly popular due to its various applications and features. It is most commonly used in automotive, industrial, and medical applications, as it is reliable and capable of storing large amounts of data. Additionally, its wide range of temperatures and voltages make it suitable for use in a variety of environments. This type of memory is becoming increasingly popular due to its ability to store data quickly and reliably, making it a viable option for many different applications.

The specific data is subject to PDF, and the above content is for reference

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