S34MS02G100BHB003 Allicdata Electronics
Allicdata Part #:

S34MS02G100BHB003-ND

Manufacturer Part#:

S34MS02G100BHB003

Price: $ 5.54
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 2G PARALLEL
More Detail: FLASH - NAND Memory IC 2Gb (256M x 8) Parallel 45...
DataSheet: S34MS02G100BHB003 datasheetS34MS02G100BHB003 Datasheet/PDF
Quantity: 1000
2300 +: $ 5.03567
Stock 1000Can Ship Immediately
$ 5.54
Specifications
Series: Automotive, AEC-Q100, MS-1
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Description

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Memory technology is one of the core components of modern computing and communication. The S34MS02G100BHB003 is a type of memory device developed and manufactured by Toshiba in Japan, and is the very latest innovation in the industry. It is a 256 megabit (Mb) multi-level cell (MLC)3.3 volt NAND Flash memory device.

The S34MS02G100BHB003 has several applications in the field of memory technology. First, it is used as solid-state storage in consumer electronics products such as digital cameras, mobile phones, MP3 players, and other handheld devices. The device is capable of storing up to 8G bits of user data, which makes it suitable for storing large volumes of data such as music files and digital images. Its small physical size helps to reduce the overall product size, thus making it ideal for use in portable electronic products.

The device is also suitable for use as a storage medium for industrial applications, such as embedded systems and car navigation systems. The device is capable of storing up to 256 megabits of data, which makes it suitable for storing large files such as firmware and programming software used in these systems. Besides its use in consumer electronics products and industrial applications, the S34MS02G100BHB003 is also used as the memory component of various medical devices such as pacemakers.

The S34MS02G100BHB003 works using NAND Flash Memory technology. This technology is similar to SDRAM but operates at a faster speed than SDRAM. NAND Flash Memory devices are non-volatile and can store data without the need for a power supply. They are also cheaper than other types of non-volatile memory such as ROM, EPROM, and EEPROM, making them highly cost effective for storing large amounts of data.

The S34MS02G100BHB003 provides a number of other advantages over other types of memory. It is more resistant to shocks and vibrations, has better durability, and provides improved write and erase speeds. These advantages make it well suited for use in handheld and portable electronic products such as digital cameras, mobile phones, and MP3 players. The device is also widely used for industrial applications requiring large amounts of data storage such as car navigation systems.

In conclusion, the S34MS02G100BHB003 is a highly advanced and versatile memory device that offers numerous advantages over other types of memory. The advantages of this device make it ideal for use in a wide range of applications, including consumer electronics, embedded systems, and car navigation systems. The device works using NAND Flash Memory technology to provide faster speeds, better durability, and improved write and erase speeds. It is also highly cost effective for storing large amounts of data.

The specific data is subject to PDF, and the above content is for reference

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