S34MS04G200BHA003 Allicdata Electronics
Allicdata Part #:

S34MS04G200BHA003-ND

Manufacturer Part#:

S34MS04G200BHA003

Price: $ 6.13
Product Category:

Integrated Circuits (ICs)

Manufacturer: Cypress Semiconductor Corp
Short Description: IC FLASH 4G PARALLEL
More Detail: FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 45...
DataSheet: S34MS04G200BHA003 datasheetS34MS04G200BHA003 Datasheet/PDF
Quantity: 1000
2300 +: $ 5.56617
Stock 1000Can Ship Immediately
$ 6.13
Specifications
Series: Automotive, AEC-Q100, MS-2
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Memory Interface: Parallel
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Description

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The S34MS04G200BHA003 memory is a four-bank Quad SPI NOR Flash Memory. It is used to support any system that requires high speed nonvolatile memory. The S34MS04G200BHA003 is optimized for code shadowing applications, including embedded microcontrollers, digital signal processing and FPGAs, as well as applications requiring both high speed read and write operations.

The S34MS04G200BHA003 memory operates with standard serial interface protocols and utilizes the industry standard 4-wire SPI bus. The four-bank configuration allows for increased reliability and long-term data retention and provides an improved support for system power management. This memory also enables advanced features such as read and write operations, program/erase functions, and error correction code (ECC) support.

The S34MS04G200BHA003 memory is also capable of providing a wide range of features that are optimized for high performance applications. These features include high speed read and write operations, low current operations, and support for various operating systems and device interfaces. In addition, the memory can perform read and program operation within a single cycle. This enables high-speed performance in systems that require fast access time for executing high-throughput operations.

The working principle of the S34MS04G200BHA003 memory is based on a four-bank configuration design. This means that four memory banks can be used simultaneously for write and read operations. In addition, the memory is capable of performing read, program, and erase operations within a single cycle. This capability provides high-speed performance and also enables advanced features such as data error correction and process-level power management.

The S34MS04G200BHA003 memory also supports a wide range of operating systems and device interfaces. The memory can be used in embedded applications that require reliable nonvolatile storage. It can also be used in industrial grade applications that require high-speed access to nonvolatile memory for data logging, data analysis, and other operations that require reliable data storage and transfer. In addition, the S34MS04G200BHA003 memory can also be used in automotive, medical, and military grade applications that require reliable nonvolatile memory.

The S34MS04G200BHA003 memory is ideal for applications that require high performance, low power consumption, and high reliability. It is specifically designed for embedded applications and is optimized for code shadowing applications, including digital processors and FPGAs. The memory also supports a wide range of device interfaces and operating systems, making it a versatile choice for any application that requires reliable storage of nonvolatile data.

The specific data is subject to PDF, and the above content is for reference

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