| Allicdata Part #: | SFT1423-E-ND |
| Manufacturer Part#: |
SFT1423-E |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | MOSFET N-CH 500V 2A TP |
| More Detail: | N-Channel 500V 2A (Ta) 1W (Ta), 20W (Tc) Through H... |
| DataSheet: |  SFT1423-E Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
Specifications
| Vgs(th) (Max) @ Id: | -- |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | TP |
| Mounting Type: | Through Hole |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 1W (Ta), 20W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 175pF @ 30V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 8.7nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 4.9 Ohm @ 1A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 2A (Ta) |
| Drain to Source Voltage (Vdss): | 500V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Bulk |
Description
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The SFT1423-E is a N-Channel enhancement mode Field Effect Transistor (FET). It is designed using the advanced MOSFET process to be used as a low on-resistance, low cost and low power switching device. The SFT1423-E is available in a very small surface-mount 1.4 mm × 2.0 mm package.
SFT1423-E Application Field
The SFT1423-E is capable of driving a large number of loads and is suitable for high frequency switching applications. It is particularly suitable for switching of negative voltage (up to -75V) and current limited applications. It is also suitable for direct drive of small dc motors and light loads.The SFT1423-E can be used in any application where a N-channel FET is needed and is suitable for DC-to-DC conversion, audio amplification, digital logic gate switching and motor control.SFT1423-E Working Principle
The SFT1423-E operates on the same principle as other MOSFET transistors. The Gate potential turns the transistor on when a voltage is applied to it. As the Gate potential increases, the conduction current also increases. The Drain-Source resistance (RDSON) is very low, allowing the transistor to switch a high current with very little power consumption. The voltage on the Gate is typically between 0 and 8V.When the Gate potential is at its highest value of 8V, the Drain-Source current is at its maximum, allowing a high current flow. This ensures that the desired voltage or current is being applied to the load.The SFT1423-E can also be used to hold a voltage or current on the load. This is done by setting the Gate potential at a level which only allows a small leakage current to flow through the transistor. This technique is often used to control the voltage or current on the load.The specific data is subject to PDF, and the above content is for reference
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