SFT1431-E

Vgs(th) (Max) @ Id:	--
Package / Case:	TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package:	TP
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	1W (Ta), 15W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	960pF @ 20V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	17.3nC @ 10V
Series:	--
Rds On (Max) @ Id, Vgs:	25 mOhm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4V, 10V
Current - Continuous Drain (Id) @ 25°C:	11A (Ta)
Drain to Source Voltage (Vdss):	35V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Bulk

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SFT1431-E application field and working principle

The SFT1431-E is a 100V N-Channel Enhancement Mode Field Effect Transistor (FET). It is designed for low-side load switch control and low gate drive current applications. The SFT1431-E is particularly suited to automotive applications where load switch current protection is essential, due to its high blocking voltage capability and low on-state resistance.

Features

The SFT1431-E offers several benefits to automotive applications, primarily in its low package loss, low Qg and high-dv/dt immunity features. Its features also include:

• Low on-state resistance
• Low input and output capacitance
• Excellent thermal response
• High blocking voltage capability
• Low gate drive current

Application fields

The SFT1431-E is most extensively used in automotive power management applications such as load switch control,DC-DC converters, and power transistors. Other potential applications include motor control, solenoid control, and power switching.

Working principle

The SFT1431-E is a common source FET. It operates by voltage biasing the gate relative to the source terminals. When the gate-to-source voltage (VGS) is positive, the SFT1431-E is conducting and has a low on-state resistance. When the voltage applied to the gate terminal is negative, the SFT1431-E is blocking and offers a high voltage blocking capability.The SFT1431-E has a very low input capacitance, which minimizes gate-drive energy loss and makes it highly desirable for automotive applications. It also has a fast switching time and is capable of handling high current and voltage. In addition, it has a low package loss, which makes it effective for heat dissipation.

Conclusion

The SFT1431-E is a 100V N-Channel Enhancement Mode Field Effect Transistor (FET) which provides excellent thermal performance, a low on-state resistance and a low gate drive current. It is most extensively used in automotive power management applications such as load switch control, DC-DC converters, and power transistors. The SFT1431-E operates by voltage biasing the gate relative to the source terminals and its low input capacitance minimizes gate-drive energy loss.

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