SI1037X-T1-E3

Series:	TrenchFET®
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	770mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	195 mOhm @ 770mA, 4.5V
Vgs(th) (Max) @ Id:	450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs:	5.5nC @ 4.5V
Vgs (Max):	±8V
FET Feature:	--
Power Dissipation (Max):	170mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SC-89 (SOT-563F)
Package / Case:	SOT-563, SOT-666

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The SI1037X-T1-E3 is a n-channel enhancement mode power MOSFET transistor specifically designed for telecommunications, industrial, automotive and consumer applications. It is a logic-level device, which means it can be switched on with very low voltage/current input signals. In addition, the device has very low on-state resistance and can handle large drain-source voltages. This makes it very suitable for high-speed switching applications.The SI1037X-T1-E3 belongs to the family of complementary MOSFET transistors (CMOS technology). It is constructed from two N-channel enhancement mode transistors, each with a separate gate and source. This allows for the device to be in either an \'on\' or \'off\' state, depending on the gate voltage. The device has a typical breakdown voltage of 20V, which makes it suitable for use in both low and high voltage applications. The SI1037X-T1-E3 can be used in a range of applications, including solar panel driver circuits, telecommunications and automotive applications. For example, the device can be used in automotive gate driver circuits to control the power output from a generator to a battery. The device can also be used to control the power supply to various circuits in telecommunications, or to switch data signals in a computer or programmable logic technology.The working principle of the SI1037X-T1-E3 is based on the basic MOSFET transistor structure. The device is constructed from two N-channel enhancement mode transistors, each with a separate gate and source. When a voltage is applied to the gate, it attracts electrons from the source and forms an inversion region. This in turn creates an electric field, allowing the device to be \'on\' or \'off\', depending on the magnitude of the gate voltage. As the device has a logic-level input voltage, it can be easily switched \'on\' or \'off\' with very low current/voltage inputs.The SI1037X-T1-E3 is a versatile device due to its wide range of applications and low voltage input requirements. It is designed for both low and high voltage circuits, and can be used for switching high-speed data signals, controlling power outputs and even for driving solar panels. Its logic-level input requirements also make it easy to use and integrate with other logic-level devices. The SI1037X-T1-E3 is a versatile device with a wide range of applications, making it ideal for a variety of projects.

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