SI1025X-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SI1025X-T1-GE3TR-ND |
Manufacturer Part#: |
SI1025X-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 60V 0.19A SC-89 |
More Detail: | Mosfet Array 2 P-Channel (Dual) 60V 190mA 250mW Su... |
DataSheet: | SI1025X-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Base Part Number: | SI1025 |
Supplier Device Package: | SC-89-6 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 250mW |
Input Capacitance (Ciss) (Max) @ Vds: | 23pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 1.7nC @ 15V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 4 Ohm @ 500mA, 10V |
Current - Continuous Drain (Id) @ 25°C: | 190mA |
Drain to Source Voltage (Vdss): | 60V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The SI1025X-T1-GE3 harnesses the power of transistors and FETs to deliver a versatile, reliable, and high-performance solution for industrial, automotive and consumer electronics applications. The SI1025X-T1-GE3 benefits from a sophisticated array of components, allowing it to offer superior performance compared to other power devices.
At the heart of the SI1025X-T1-GE3 is a high-frequency MOSFET array, consisting of four self-contained cells. Each cell contains a vertical insulated gate bipolar transistor (IGBT) and one MOSFET. The IGBTs provide fast switching speeds and low on-resistance, making them ideal for high frequency, high power applications. The MOSFETs provide fast switching speeds and a higher temperature operating range, allowing them to handle extreme temperatures.
The SI1025X-T1-GE3 is an excellent choice for applications such as SMPS, DC-DC converters, energy efficiency controllers, and solar inverters. The device\'s high performance and reliability makes it ideal for these types of applications, and it is capable of delivering up to 6A continuous current, allowing it to easily handle a wide range of load conditions. The device is also capable of operating at a wide range of temperatures and voltage levels, making it an ideal solution for a variety of applications.
The SI1025X-T1-GE3 also offers excellent power and efficiency stability when operating at low frequencies. The device is designed to offer low conduction losses and minimal noise when operating at frequencies below 1MHz, and its advanced cell-level isolation ensures minimal loss and noise when operating at higher frequencies. The device also offers thermal protection, allowing it to withstand extreme temperatures and protect the device from damage.
In addition to its excellent performance, the SI1025X-T1-GE3 also offers excellent flexibility. It is available in a wide range of packages, offering a variety of mounting and installation options. It also offers a wide range of operating parameters, allowing it to be used in a variety of applications and designs. The device also offers excellent flexibility in terms of its control and configuration, allowing it to be adjusted to meet the specific needs of the application.
The SI1025X-T1-GE3 is an ideal solution for those looking for a reliable, high-performance device for applications in industrial, automotive and consumer electronics applications. Its sophisticated MOSFET array and its wide range of package options, operating parameters and control features make it an excellent option for today\'s demanding applications. The device is an excellent choice for those looking for a reliable and efficient solution for their industrial, automotive and consumer electronics applications.
The specific data is subject to PDF, and the above content is for reference
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