Allicdata Part #: | SI1067X-T1-GE3-ND |
Manufacturer Part#: |
SI1067X-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 20V 1.06A SC89-6 |
More Detail: | P-Channel 20V 236mW (Ta) Surface Mount SC-89-6 |
DataSheet: | SI1067X-T1-GE3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 20V |
Current - Continuous Drain (Id) @ 25°C: | -- |
Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
Rds On (Max) @ Id, Vgs: | 150 mOhm @ 1.06A, 4.5V |
Vgs(th) (Max) @ Id: | 950mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 9.3nC @ 5V |
Vgs (Max): | ±8V |
Input Capacitance (Ciss) (Max) @ Vds: | 375pF @ 10V |
FET Feature: | -- |
Power Dissipation (Max): | 236mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SC-89-6 |
Package / Case: | SOT-563, SOT-666 |
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The SI1067X-T1-GE3 (herein referred to as SI1067) is a high performance, low power MOSFET transistor. It is designed to have low RDS (on) resistance and low Qg (gate charge). This makes the SI1067 an ideal choice for applications such as high speed logic switching, high voltage power transistor, and low noise amplifiers.
The SI1067 is a single, self-aligning N-channel MOSFET. It is built on a high voltage, high current silicon substrate and is protected by both an oxide layer and a polysilicon gate. The transistor has a gate terminal (gate), a drain terminal (drain) and a source terminal (source) allowing for three-terminal connection.
Depending on the intended application, the SI1067 can be used either in a high side switch configuration or a low side switch configuration. In a high side switch configuration, the transistor is turned on by providing a logic-level signal to the gate. The signal needs to be greater than the threshold voltage - typically 3V to 4.5V- in order to turn on the transistor. Once the signal is applied, current is drawn from the source and sent to the drain of the transistor through the channel.
In a low side switch configuration, the transistor is turned off by providing a logic-level signal to the gate. The signal needs to be less than the threshold voltage- typically 0.5V to 1V- in order to turn the transistor off. Once the signal is applied, current is drawn from the drain and sent to the source of the transistor through the channel.
The wide variety of specifications of the SI1067 allows it to be used in a number of applications. It is commonly used in motor control systems, home appliance control circuits, automotive safety systems, consumer electronics, and audio/video applications. It can also be used for driving high current loads, such as relays, solenoids and motors.
The SI1067 is a highly reliable and robust device. It can withstand a wide range of temperatures, from -40°C to +150°C, and is designed to have a long lifetime expectancy. It is also designed to be resistant to electrostatic discharge, or ESD, and can function in high humidity environments.
In summary, the SI1067 is a high performance, low power MOSFET transistor. It is designed to have low RDS (on) resistance and low Qg (gate charge). It is most commonly used in motor control systems, home appliance control circuits, automotive safety systems, consumer electronics, and audio/video applications. It is a highly reliable and robust device and can withstand a wide range of temperatures, from -40°C to +150°C.
The specific data is subject to PDF, and the above content is for reference
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