SI1065X-T1-E3

Vgs(th) (Max) @ Id:	950mV @ 250µA
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SC-89-6
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	236mW (Ta)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	480pF @ 6V
Vgs (Max):	±8V
Gate Charge (Qg) (Max) @ Vgs:	10.8nC @ 5V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	156 mOhm @ 1.18A, 4.5V
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C:	--
Drain to Source Voltage (Vdss):	12V
Technology:	MOSFET (Metal Oxide)
FET Type:	P-Channel
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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SI1065X-T1-E3 application field and working principle

SI1065X-T1-E3 is a silicon-based, monolithic enhancement-mode power MOSFET(metal–oxide–semiconductor field-effect transistor) which belongs to a family of transistors called insulated gate field-effect transistors, or IGFETs. This type of transistor is used in a variety of applications, including power management, audio amplifiers, motor control and switch mode power supplies, among others.

Application fields

The SI1065X-T1-E3 is a high quality, silicon-based power MOSFET that is designed for a variety of applications, including power management in switch mode power supplies, audio amplifiers, and motor control applications. The device is widely used in industries for applications that require a low-power circuit with high frequency response and excellent thermal properties. This makes the device an ideal choice for a variety of consumer electronics applications. Many consumer electronic products that use SI1065X-T1-E3 typically include consumer audio devices such as soundbars, car stereos, cell phones, and consumer robotics products.Aside from consumer electronics, the SI1065X-T1-E3 can also be found in other industrial applications such as industrial motor control, high voltage power systems, instrumentation product designs, and even home automation systems.

Working principle

The SI1065X-T1-E3 is an enhancement-mode MOSFET, which means that a voltage, or gate-source voltage, is required to open the transistor, allowing a source-drain current to flow from drain to source. Once the gate-source voltage is removed, the transistor is switched off, and the current flow from drain to source stops. The device also features a robust output stage with a low on-state resistance, which helps to minimize power losses during device operation. The low output resistance also helps to reduce losses, allowing the device to efficiently transfer power and data signals. Furthermore, the device has excellent thermal properties, enabling it to operate at high temperatures without unforeseen shutdowns or malfunctions.

Conclusion

The SI1065X-T1-E3 is an extremely versatile and cost-effective MOSFET that can be used in a variety of applications. Its excellent thermal properties, high frequency response, and low output resistance make it an ideal choice for applications such as audio amplifiers, motor control, power management, and many more. If you are looking for a reliable and cost-effective power MOSFET for your next project, the SI1065X-T1-E3 is a great choice. With its cost-effectiveness, thermal properties, and high frequency response, it is an excellent choice for a variety of projects and applications.

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