Allicdata Part #: | SI1050X-T1-E3TR-ND |
Manufacturer Part#: |
SI1050X-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 8V 1.34A SOT563F |
More Detail: | N-Channel 8V 1.34A (Ta) 236mW (Ta) Surface Mount S... |
DataSheet: | SI1050X-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 8V |
Current - Continuous Drain (Id) @ 25°C: | 1.34A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Rds On (Max) @ Id, Vgs: | 86 mOhm @ 1.34A, 4.5V |
Vgs(th) (Max) @ Id: | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 11.6nC @ 5V |
Vgs (Max): | ±5V |
Input Capacitance (Ciss) (Max) @ Vds: | 585pF @ 4V |
FET Feature: | -- |
Power Dissipation (Max): | 236mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SC-89-6 |
Package / Case: | SOT-563, SOT-666 |
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SI1050X-T1-E3 is a Field-Effect Transistor (FET) that is commonly used in a variety of applications. It is an N-channel Enhancement mode silicon gate-oxide insulated MOSFET that is used in various types of power supply circuits, switching applications, and audio systems. The SI1050X-T1-E3 has a maximum breakdown voltage of 18V and can handle a maximum continuous drain current of 10A. The device has a low input capacitance and a very low on-resistance, making it highly efficient. It is also inexpensive and easy to use, making it an ideal choice for many applications.
The working principle of the SI1050X-T1-E3 is fairly simple. When the gate voltage is increased, the channel of the FET opens, allowing a current to flow between the drain and the source. This current flow is dependent on the amount of the gate voltage applied, with higher voltages producing higher currents. This in turn causes the drain-to-source voltage to drop, enabling the transistor to act as a switch.
The SI1050X-T1-E3 can be used in a variety of applications, such as power supply circuits, switching applications, and audio systems. In power supply circuits, the SI1050X-T1-E3 can be used to control the amount of current flowing from the power supply to other components in the circuit. This can help to improve the efficiency of the power supply and protect other components from overloading. In switching applications, the FET can be used to switch between two loads, either turning on or off a current flow in a circuit. Lastly, the FET can be used in audio systems to control the current flowing from the amplifier to the speakers, enabling the user to adjust the volume and frequency of the audio.
Overall, the SI1050X-T1-E3 is a versatile and efficient FET with a low cost and easy operation. It can be used in various types of power supply circuits, switching applications, and audio systems due to its low input capacitance and very low on-resistance. With its wide range of capabilities, the SI1050X-T1-E3 is an ideal choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
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