SI1036X-T1-GE3

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The SI1036X-T1-GE3, a half-bridge array of N-channel MOSFETs, is commonly used in a variety of applications. It offers a wide range of features due to its versatile design and low voltage operation. This article describes the main features and working principles of this array and its various application fields.

Key Features

The SI1036X-T1-GE3 array provides optimal performance for a range of applications. The array consists of vector-scaled N-channel MOSFETs with low voltage operation. It has a maximum on-state resistance of 0.070 ohms and a maximum power dissipation rating of 1500 W. The array has relatively low switching times and is well suited to high-speed applications. Additionally, its ESD robustness makes it suitable for use in portable devices.

The array is available in a variety of package types, including through-hole and surface mount. The through-hole versions provide improved electrical and thermal performance, while the surface mount versions offer an easier, compact installation. Each package also features an integrated gate resistor to help protect against ESD.

Working Principle

The SI1036X-T1-GE3 array operates in a half-bridge configuration. This involves two N-channel MOSFETs, one at each end of the array, supplying voltage to the load. The gate of each FET is either triggered on or off via a control signal. The two FETs then alternately conduct current, controlling the flow of power to the load. This two-dimensional operation provides superior power control and increased efficiency compared to a single MOSFET.

The array provides a wide range of features to improve user experience. For example, it features an integrated gate resistor that improves ESD reliability; it also features a dual-gate logic (DGL) mode to simplify the control interface. When operated in DGL mode, the two FETs in the array can be independently switched on or off via a single control signal. This greatly simplifies the control system and reduces the number of components required to operate the array.

Applications

The SI1036X-T1-GE3 array can be used in a variety of applications. It is commonly used in high-power switching converters, power amplifiers and voltage regulators. Its robust ESD performance also makes it ideal for use in portable electronics. Additionally, its low switching times make it well suited to applications where high-speed switching is required, such as motor control and power supply units.

The array is also suitable for automotive applications. Its low on-state resistance helps reduce the power losses and makes it a cost-effective solution for engine control and electric vehicle charging systems. Additionally, its ESD robustness ensures reliable operation in the presence of extreme environmental conditions.

Conclusion

The SI1036X-T1-GE3 array is a versatile, low voltage half-bridge N-channel MOSFET array. It features a low on-state resistance, integrated gate resistor and dual-gate logic mode to simplify the control interface. This array is ideal for a range of applications, from high-power switching converters to automotive systems.

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