Allicdata Part #: | SI1025X-T1-E3TR-ND |
Manufacturer Part#: |
SI1025X-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 60V 0.19A SOT563F |
More Detail: | Mosfet Array 2 P-Channel (Dual) 60V 190mA 250mW Su... |
DataSheet: | SI1025X-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Base Part Number: | SI1025 |
Supplier Device Package: | SC-89-6 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 250mW |
Input Capacitance (Ciss) (Max) @ Vds: | 23pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs: | 1.7nC @ 15V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 4 Ohm @ 500mA, 10V |
Current - Continuous Drain (Id) @ 25°C: | 190mA |
Drain to Source Voltage (Vdss): | 60V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI1025X-T1-E3 is a family of fully integrated MOSFET devices suitable for high-performance, electrical contactors and motor control circuits. It is also used in industrial, automotive and aerospace applications.
The SI1025X-T1-E3 is a high-density, low-voltage array MOSFET designed to deliver exceptional switching performance. It features 10-channel, each with a rated voltage of 25V, a maximum on-resistance of 1.5 mΩ, a maximum switching frequency of 20kHz, and a gate current control of 20 mA. The device also offers gate driving and overcurrent protection, making it suitable for high current appliations.
The SI1025X-T1-E3\'s fully integrated design allows for scalability and lower-cost implementations. The device is fully shielded and insulated, with built-in temperature sensing, providing improved reliability. The three different packages available, SOIC-8, TSSOP-8 and MSOP-8, are compatible with different industry standard footprints and make it easy to integrate into existing designs.
The SI1025X-T1-E3\'s working principle is based on the two-terminal connection of the MOSFETs. The two terminals are an \'source\' terminal and a \'drain\' terminal. The source terminal applies a DC voltage and the drain terminal is connected to the load. When the voltage applied to the source terminal exceeds the threshold of the MOSFET, current begins to flow. This current will flow until the voltage applied to the source terminal is removed.
The MOSFETs in the SI1025X-T1-E3 array are arranged in a parallel configuration and connected to a common gate terminal. When the gate terminal is energized, all of the MOSFETs are turned on, allowing a large amount of current to be transferred. The higher the voltage applied to the gate terminal, the higher the current that can be transferred.
This makes the SI1025X-T1-E3 an ideal choice for applications requiring high current capacities, such as power electronics, motor control circuits, and industrial contactors. In these applications, the device provides fast switching performance and improved thermal performance, making it a highly reliable and cost-effective solution.
In summary, the SI1025X-T1-E3 is a versatile array MOSFET device suitable for various commercial and industrial applications. Its fully integrated design, low-voltage rating, fast switching performance, and high reliable operation make it a popular choice for contactor and motor control circuits.
The specific data is subject to PDF, and the above content is for reference
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