SI1029X-T1-E3 Discrete Semiconductor Products

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The SI1029X-T1-E3 is a radiation-hardened, normally-off, double-diffused metal-oxide-semiconductor field-effect transistor (DMOSFET) array designed for space, avionics, telecom and industrial applications. This DMOSFET array utilizes the advanced silicon gate MOSFET process to achieve superior performance in low power switches and analog circuits such as DC-DC converters, motor drive and gate drive circuits.

DMOSFET arrays consists of a monolithic silicon substrate with multiple array elements or transistors integrated together. This feature allows them to be used as a replacement for a number of regular transistors. DMOSFET arrays are typically used in circuits requiring multiple transistors because they can reduce the physical size of the circuit, minimize thermal stress caused by heat, and reduce power requirements. The SI-1029X-T1-E3 is a perfect example of such a device, combining high reliability and performance in a small package.

The SI-1029X-T1-E3 has a maximum drain current of 24mA, a maximum drain-source voltage of 600V and a maximum gate voltage of -40V. It is designed for operation in temperatures ranging from -55°C to 175°C, making it ideal for extreme temperature applications. Additionally, it has radiation tolerance of up to 300krads(Si).

The working principle of the SI-1029X-T1-E3 is fairly simple. The DMOSFET array is connected in series to the gate and drain pins, with a voltage applied to the drain pin. When the gate voltage is below the turn-on threshold voltage, it remains off and no current flows through the device. When the gate voltage is increased beyond this threshold voltage, the MOSFET array turns on and current flows from the drain to the source, producing an output. This output is then either used directly or further modified based on the design of the circuit.

The SI-1029X-T1-E3 is capable of providing high current output and low power consumption, making it ideal for use in DC-DC converters, motor drives, and gate drive circuits, as well as any other applications requiring high power and low noise. Its radiation-hardened design makes it well suited for applications in space and other extreme temperature environments, such as avionics, telecom and industrial applications.

The SI-1029X-T1-E3 is a great example of a DMOSFET array, providing excellent performance and reliability in a small package. Its ability to withstand extreme temperatures and high radiation levels make it the perfect device for any application requiring high current outputs and low power consumption. In conclusion, the SI-1029X-T1-E3 DMOSFET array is an ideal device for a variety of different applications, ranging from space applications to avionics and telecom.

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