SI1035X-T1-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SI1035X-T1-E3TR-ND |
Manufacturer Part#: |
SI1035X-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N/P-CH 20V SOT563F |
More Detail: | Mosfet Array N and P-Channel 20V 180mA, 145mA 250m... |
DataSheet: | SI1035X-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 400mV @ 250µA (Min) |
Base Part Number: | SI1035 |
Supplier Device Package: | SC-89-6 |
Package / Case: | SOT-563, SOT-666 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 250mW |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 0.75nC @ 4.5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 5 Ohm @ 200mA, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 180mA, 145mA |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | N and P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The SI 1035X-T1-E3 is a semiconductor device commonly employed in various applications to switch current on or off depending on various conditions. This versatile device, which can include from one to three MOSFETs and P-Channel Enhancement-Mode FETs, is often used in automotive, automotive control, and white goods applications. This document focuses on the main characteristics of the SI 1035X-T1-E3, including its applications, its working principle, and some of its most important technical specifications.
Applications
Given its versatility, the SI 1035X-T1-E3 is used in a wide variety of applications, including automotive, automotive control, and white goods. Automotive applications include such things as driving motors, controlling pumps and fans, shifting power between components, temperature control, and power control. Within automotive control, the MOSFETs in the SI 1035X-T1-E3 are used for current and voltage level control, signal conditioning, signal switching, signal buffering, and noise reduction. Similarly, within white goods, the device can be used for various power control tasks.
Working Principle
The SI 1035X-T1-E3 works on a basic principle of electrical resistance. When a voltage is applied to the gate of the device, a small current flows through it. This current is then used to activate the MOSFETs, which then increase their resistance, allowing more current to pass through them. This increase in current, in turn, triggers the P-channel FETs, which then, by controlling the flow of current throughout the device, perform the appropriate electrical task.
Technical Specifications
The SI 1035X-T1-E3 is available in a variety of packages, including plastic, ceramic, and metal. It can operate between -40 and 150 degrees Celsius, has a maximum gate-source voltage of 8 volts, and a maximum current sink of 6 amps. Additionally, the device has an average on-resistance of 0.25 ohms, a maximum operating frequency of 1 MHz, and an Rg (gate resistance) of 100 ohms.
In conclusion, the SI 1035X-T1-E3 is a versatile device commonly used in automotive, automotive control, and white goods applications. It utilizes MOSFETs and P-channel Enhancement-Mode FETs to control the flow of current, and is able to operate within a wide temperature range and with a high maximum operating frequency. Additionally, it comes in a variety of packages, and has an average on-resistance and Rg (gate resistance) of 0.25 ohms and 100 ohms, respectively.
The specific data is subject to PDF, and the above content is for reference
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SI1056X-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V SC-89-6N-... |
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SI1058X-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V SC89N-Cha... |
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SI1037X-T1-GE3 | Vishay Silic... | -- | 1000 | MOSFET P-CH 20V 0.77A SC8... |
SI1046R-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 0.606A SC... |
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SI1054X-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 12V 1.32A SC8... |
SI1069X-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 20V 0.94A SC8... |
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SI1012X-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 500MA SC8... |
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SI1056X-T1-E3 | Vishay Silic... | -- | 1000 | MOSFET N-CH 20V 1.32A SOT... |
SI1058X-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET N-CH 20V 1.3A SOT5... |
SI1065X-T1-E3 | Vishay Silic... | 0.0 $ | 1000 | MOSFET P-CH 12V 1.18A SOT... |
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